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  • 1
    Electronic Resource
    Electronic Resource
    Structure and dynamics of cyclopropane in solution by nuclear magnetic resonance coupled relaxation (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 2708-2713 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150657a008
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  • 2
    Electronic Resource
    Electronic Resource
    Ruby spectral band-profile analysis for temperature sensing (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3599-3606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral band profiles of the E¯→4A2g and 2A¯→4A2g transitions of Cr3+ in Al2O3, i.e., the commonly known ruby 6943 A(ring) (R1) and 6929 A(ring) (R2) emission lines, in the temperature range 10–300 K were recorded and deconvoluted numerically with excellent accuracy into a Lorentzian (homogeneous) component and a Gaussian component. The Gaussian width was taken as arising from sample inhomogeneity and spectrometer slit function, and as expected was found to be independent of temperature. The Lorentzian width was found to vary with temperature in accordance with the two-phonon relaxation processes reported previously, plus a thermal broadening process. While the former processes were quenched completely as temperature was lowered to about 90 K, the latter process, describable with the Debye–Waller factor, still caused a Lorentzian width of about 0.2 cm−1 (for both R1 and R2 lines) which then leveled out quickly to about 0.1 cm−1 as the temperature was lowered further. For temperatures above 100 K, the positions of the R1 and R2 lines were found to have the same temperature dependence as that reported previously. The use of the temperature dependencies of Lorentzian width and line position for temperature sensing was discussed; such an instrument could indeed be made portable because of the simple optical and electronic systems used in our experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356071
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  • 3
    Electronic Resource
    Electronic Resource
    Explosive anisotropic grain growth of delta-NiMo by solid-state diffusion (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2642-2644 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous, anisotropic grain growth has been observed in delta(δ)-NiMo intermetallic compound during the annealings of Mo/Ni thin-film diffusion couples at 700 and 800 °C. Two layered microstructures showing median-sized, equiaxed grains and large columnar single crystalline grains were generated. The growth direction of the columnar grains was parallel to the direction of Ni diffusion flux. Electron diffraction indicated that both the median-sized and the columnar grains were δ-NiMo. The composition of δ-NiMo was determined to be Ni48-Mo52 (at.%). According to the thickness of reaction-formed δ-NiMo, the apparent interdiffusion coefficient was measured to be about 10−10 cm2/s which is 4 to 5 orders of magnitude greater than literature data. The enhanced diffusion rate in Ni-Mo, and the anomalous anisotropic grain growth of δ-NiMo compound are discussed on the basis of exothermic reactions between Ni and Mo during diffusional intermixing. The enthalpy of the formation of δ-NiMo is calculated and demonstrated to be sufficient to cause melting/solidification of the compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104794
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial reaction of BN/Ni3Al (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1500-1502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reaction between BN and Ni3Al was studied by diffusion bonding at 1000 °C. Error function type diffusion profiles of Ni and Al were observed. Al enrichment at the interface was detected. Kirkendall voids [Trans. Am. Inst. Min. Eng. 171, 130 (1947)] with faceted interfaces were observed in the interdiffusion zone of Ni3Al side. In situ fractured interface showed a typical heterogeneous interfacial reaction. Three-dimensional Ni clusters were observed to grow into islands, and unevenly distributed in an alumina matrix of whisker form. The intriguing pattern of the outdiffusion and clustering of Ni atoms, as compared to Al, during the chemical interdiffusion between BN and Ni3Al is discussed based upon grain boundary diffusion, diffusion environment, and thermodynamic driving force under oxygen environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100467
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  • 5
    Electronic Resource
    Electronic Resource
    Interaction of a polycrystalline silicon/SiO2/silicon substrate under thermal/electrical fields (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric current induced breakdown phenomenon of silicon dioxide film was studied by annealing the sandwich samples of polycrystalline Si/SiO2 /Si substrate at 700 °C under electric currents. Cross-sectional transmission electron microscopy revealed two interesting results: (1) the aggregation of voids into large holes at the interface of polycrystalline Si/SiO2 , and (2) the nucleation and growth of crystalline Si in the silicon dioxide layer. The crystalline Si was either of single crystalline or polycrystalline forms, depending on the nucleating interfaces. Local melting as a result of Joule heating was observed. The breakdown of the oxide is mainly attributed to the loss of oxide integrity as a result of heterogeneous Joule heating. The nucleation and growth of crystalline Si in the amorphous oxide layer suggest the direct decomposition of SiO2 during the oxide breakdown process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99684
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  • 6
    Electronic Resource
    Electronic Resource
    Lattice imaging of metastable TiSi2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2275-2279 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstucture of metastable C49-TiSi2 was studied by high-resolution transmission electron microscopy in a bilayer thin film of Ti and Si annealed at 700 °C. Large grains (300–400 nm) of C49-TiSi2 phase with high density of stacking faults on (010) planes were observed. A preferred orientation among the C49-TiSi2 grains was identified, and the grains were aligned along the [010] with slight misorientation. The diffraction pattern from the metastable TiSi2 showed continuous streaks superimposed by discrete spots along hk0 reciprocal lattice rows, indicating the presence of polytypism. Lattice imaging of polytypic TiSi2 has been obtained and it showed that the structure is nonperiodic and one dimensionally disordered due to the stacking faults. The finding of metastable TiSi2 associated with polytypism suggests that its structure could be conveniently represented by various stackings of atomic planes along the [010] direction. An atomic model is proposed to explain the origin of polytypism. It is shown that the arrangement of atoms in C49-TiSi2 structure has four equivalent positions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339483
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  • 7
    Electronic Resource
    Electronic Resource
    Secondary grain growth and formation of antiphase domains in ordered Cu3Au thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2375-2379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalously large grains due to secondary grain growth in the ordered Cu3 Au thin film were observed by annealing the disordered thin film at 250 °C. No secondary grain growth was observed in the films annealed at 300 and 350 °C. The secondary grains have a preferred orientation of 〈111〉. Formation of antiphase domains with sizes larger than the normal grain size was found to accompany the growth of the secondary grains. Transmission electron microscopy showed that the coalescence of ordered grains contributed appreciably to the enlargement of secondary grains and antiphase domains. The driving forces of secondary grain growth and enhanced ordered domain growth are discussed on the basis of surface energy anisotropy and grain boundary migration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341669
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  • 8
    Electronic Resource
    Electronic Resource
    Enhanced grain growth of polycrystalline silicon at low temperature by dopant redistribution (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2722-2726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been recently reported that the redistribution of dopant during titanium silicide formation enhances the grain growth of polycrystalline silicon at a temperature lower than it normally occurs. The mechanism which is responsible for the enhanced grain growth has been proposed to be dopant diffusion induced grain-boundary migration. We have carried out a detailed study to clarify the mechanism. The results show that the effect of phosphorus dopant alone has a small influence on the grain growth of polycrystalline silicon around 900 °C. However, much enhanced grain growth of polycrystalline silicon accompanied by titanium silicide formation was observed at 700 °C in medium doped and heavily doped conditions as compared to those without silicide formation. On the other hand, no enhanced grain growth was observed in lightly doped and undoped situations regardless of titanium silicide formation. By correlating these observations with depth profiling of dopant distribution, it is concluded that the formation of titanium silicide serves as a sink for the out-diffusion of dopant. The out-diffusion of dopant, preferentially through grain boundaries, leads to a reduction of 30%–50% of dopant from the implanted levels. The depletion of dopant induces grain boundaries to migrate, and therefore enhances the grain growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339423
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  • 9
    Electronic Resource
    Electronic Resource
    Studies on damage removing efficiency of B11+ and BF+2 implanted Si0.84Ge0.16 epilayers by rapid thermal annealing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 232-234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality metastable pseudomorphic Si1−xGex epilayers were grown by ultrahigh vacuum chemical vapor deposition using Si2H6 and GeH4. These epilayers were implanted with 40 keV B11+ and 100 keV BF+2 ions at a dose of 1×1015 ions/cm2 and then annealed by rapid thermal annealing (RTA) processes at temperatures of 600, 650, 700, and 750 °C for 30 s duration. Double-crystal x-ray diffractometry was used to evaluate the level of the implant-induced damage and the damage removing efficiency of both ion implanted samples at different RTA conditions. The results show that the RTA process is more effective at removing damage from B11+ implanted samples than from those implanted with BF+2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116470
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  • 10
    Electronic Resource
    Electronic Resource
    The Synthesis of Some Aryl Nitrogen Mustard Derivatives of Estrogens1 (1967)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 10 (1967), S. 255-257 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00314a030
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