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  • 1
    Electronic Resource
    Electronic Resource
    Optimization of sub 3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 384-386 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vertical scaling of oxide thickness in the ultra large scale integrated era places stringent requirements on oxide quality. In this letter we report optimization studies in the growth of ultrathin oxynitrides in the sub 3 nm range. The oxynitride growth technique used involved self-limiting growth in nitric oxide (NO) followed by reoxidation in oxygen or nitrous oxide (N2O) ambient. This method allows tight control of oxide thickness and resulted in consistently low leakage currents over a range of thicknesses from 2 to 3 nm. The reliability of the oxynitrides is characterized using QBD, stress-induced leakage and surface charge and contact potential difference measurements. Charge-to-breakdown (QBD) data indicate that the reliability of the oxide degrades with increasing nitridation times in an NO ambient. Increasing reoxidation times in O2 have a similar effect. It is found that an improvement in reliability can be obtained by reoxidation in an N2O ambient. Surprisingly, reoxidizing in N2O proceeds at a higher rate than in O2 and this enables the use of lower thermal budgets. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118389
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of BF2 implantation on ultrathin gate oxide reliability (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1591-1592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BF2 implantation is widely used to form P wells, adjust channel threshold voltage, and reduce short channel effects. In this letter, we study effect of BF2 implantation on ultrathin gate oxide reliability. It has been found that BF2 implantation into Si substrate causes degradation of gate oxide reliability in the ultrathin oxide thickness regime. N2O oxide can be used to reduce degradation caused by the implantation and improve gate oxide reliability. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117040
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Reliability of gate oxide grown on nitrogen-implanted Si substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3701-3703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct nitrogen implant into Si substrate prior to gate oxidation has been proposed to grow multiple gate oxide thicknesses on a single wafer. In this letter, we have studied the reliability of gate oxide grown on nitrogen-implanted Si substrate. The effects of implant doses, sacrificial oxide thicknesses, and gate oxide thicknesses on gate oxide reliability have been investigated. It was found that there is a tradeoff between oxide thickness control and gate oxide reliability. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117194
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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