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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 796-800 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoluminescence measurements are performed in order to study the effect of thermal annealing on phosphorus implanted silicon wafers. Measurements are carried out at near band gap excitation with a Nd:YAG laser operating at 1.06 μm. Photoluminescence measurements are also carried out with 0.488 μm laser excitation. It was found that implantation conditions (dose and energy) and annealing temperature strongly influence the intensity of the photoluminescence signal. Contribution from the bulk silicon and the effects from the ion implantation to the photoluminescence signal are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3377-3384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of 0.75–4 μm and 3–25 μm. In the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonance has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation of free carriers (implanted impurities) with implantation dose and annealing temperature have been reached.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8032-8038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies and doses, below, and over the critical dose of amorphization. The post-implanted period was followed by thermal isochronal annealing at various temperatures. Special attention has been given to the amorphous/crystal transition occurring at various annealing temperatures. A bi layer model [R. Loudon, J. Phys. (Paris) 26, 677 (1965)] has been used for a quantitative determination of the annealing temperature at which a complete annihilation of implantation defects takes place. For this analysis, Raman spectra, resistivity depth profiles, as well as 1D-SUPREM III simulation were used.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of solid-state sensor for the detection of minute concentrations of hydrogen gas has been developed. The sensor was made of thin, commercially available polyvinylidene fluoride (PVDF) pyroelectric film, sputter coated with Pd. An infrared laser beam served to produce alternating temperature gradients on the Pd-PVDF and on reference Al-Ni-PVDF films, which, in turn, generated ac voltages due to the photopyroelectric (P2E) effect. Exposure to hydrogen gas was shown to produce an increased differential signal between the Pd and reference electrodes; this was tentatively attributed to the adsorption and dissociation of hydrogen molecules on the Pd surface, which caused a shift on the Pd-PVDF pyroelectric coefficient, due to interactions at the Pd-PVDF interface. The differential signal was found to be proportional to the square root of the hydrogen partial pressure at very low concentrations (〈1000 ppm). A semiquantitative interpretation of the differential signal has been achieved using simple gas-solid interaction theory and the combination of the Langmuir isotherm with the photopyroelectric theory in the range of 4–200 Pa. For high pressures (〉200 Pa) the paper is limited only to a phenomenological description. The thickness of the palladium layer has been found to play an important role with respect to the signal response. Presently, hydrogen concentrations as small as 40 ppm, in a flowing H2+N2 mixture, have been detected. The influence of gas flow rate has also been studied. Other characteristics such as the response times, the reversibility, and the durability of the Pd-PVDF-P2E hydrogen detector will also be presented.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4832-4839 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ac and dc Hall-effect measurements, as a function of temperature and frequency, have been employed to characterize arsenic-implanted silicon films. A significant modification of the carrier scattering mechanism occurs for annealing temperature around 550 °C which is manifested as a drastic change in the behavior of the temperature and frequency dependence of the transport parameters. Finally, the experimental results are discussed with respect to transport models which take into account short- and long-range disorder, in order to help us understand the behavior of the implantation defects and inhomogeneities, and their thermal annihilation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3331-3338 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The optical properties of several thin metal film palladium-silicon oxide structures are examined at room temperature before and after annealing to 200 °C and also at 90 °C—in all cases in the presence of hydrogen gas. Multicycling sample activation is shown to occur in the presence of hydrogen at room temperature with an increase in reflectivity on exposure to hydrogen, in contrast to thicker 80 Å films. The reflectivity change increases with increasing film thickness (1–10 Å). The surface activation at room temperature, before and after annealing to 200 °C, is compared with the performance at 90 °C, where it is shown that heat treatment strongly influences the behavior of the metal film.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3544-3552 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A study of a thermal wave hydrogen sensor interrogated via transverse optical beam deflection spectroscopy is presented. The sensor is a thin film polyvinylidene fluoride film coated with a thin palladium layer. The sensitivity to hydrogen results from thermal boundary condition changes at the gas–film interface and depends upon the thermophysical properties of the gas. A simple one-dimensional model is developed to qualitatively and semi-quantitatively describe the experimental results and it shows good agreement with the experiment. Concentrations of 0.1% hydrogen in the presence of a balanced air mixture and at room temperature were measured for this sensor and they indicate possible sensitivities approaching 100 ppm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4840-4844 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effects of the annealing temperature and time on arsenic-implanted silicon films is reported. ac and dc Hall-effect measurements as a function of temperature and frequency have been employed to characterize arsenic-implanted silicon films. The method of spreading resistance has also been used, allowing measurement of the resistance of the implantation damage layer as a function of depth. These techniques allow one to probe the annihilation processes of damage layer defects as a function of annealing conditions (i.e., temperature and time). The activation energy of the recovery process of the ionic implantation damage, found to be about 0.6 eV, is attributed to a local reconstruction of the implanted layer.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1280-1285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative analysis of the influence of temperature and modulation frequency on the thermal activation coupling term in laser photothermal theory is performed. Until now it was taken for granted that the coupling term is negligible only in the case of "relatively low" temperatures and generally when the equilibrium free-carrier density n0 satisfies the Sablicov's, Vasil'ev, and Sandomirskii inequality. In this work an extensive computational study of this inequality in the temperature range of 300–1000 K was performed and a precise "map" is given concerning the violation of the inequality under various conditions including modulation frequency (0.1–106 Hz) and doping concentration (intrinsic to 1020 cm−3). Some experimental photomodulated measurements have been performed in order to test the validity of the "map." © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 6-MHz piezoelectric quartz-crystal microbalance coated with palladium electrodes has been used under STP gas flow-through conditions to detect hydrogen adsorption at low concentrations (〈5% in nitrogen) where anomalous behavior has been observed due to interferences from other ambient or impurity gases (mainly O2). A systematic study showed that a concentration of 0.4% hydrogen produced no frequency shift in the sensor due to counterbalancing effects from other gases. Thus sensor sensitivity limits were established at 0.5% hydrogen, which is ca.∼200 times lower than the photopyroelectric (P2E) sensor (part I). The hydrogen selectivity of the piezoelectric sensor was found to be inferior to that of the P2E device.
    Type of Medium: Electronic Resource
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