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  • 1
    Electronic Resource
    Electronic Resource
    Theoretical investigation of CoSi2/Si1−xGex detectors: Influence of a Si tunneling barrier on the electro-optical characteristics (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1151-1156 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi2/Si1−xGex Schottky barrier diodes grown from Co/Si/Si1−xGex systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi2/Si1−xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360913
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of the noise in secondary ion mass spectrometry depth profiles (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7104-7107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The noise in the depth profiles of secondary ion mass spectrometry (SIMS) is studied using different samples under various experimental conditions. Despite the noise contributions from various parts of the dynamic SIMS process, its overall character agrees very well with the Poissonian rather than the Gaussian distribution in all circumstances. The Poissonian relation between the measured mean-square error and mean can be used to describe our data in the range of four orders. The departure from this relation at high counts is analyzed and found to be due to the saturation of the channeltron used. Once saturated, the detector was found to exhibit hysteresis between rising and falling input flux and output counts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363722
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of the ohmic conductivity and activation energy of Pb1+y(Zr0.3Ti0.7)O3 thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 518-520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ohmic conductivity of the sol–gel derived Pb1+y(Zr0.3Ti0.7)O3 thin films (with the excess lead y=0.0 to 0.4) are investigated using low frequency small signal ac and dc methods. Its temperature dependence shows two activation energies of 0.26 and 0.12 eV depending on temperature range and excess Pb levels. The former is associated with Pb3+ acceptor centers, while the latter could be due to a different defect level yet to be identified. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1387264
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  • 4
    Electronic Resource
    Electronic Resource
    Investigations into local piezoelectric properties by atomic force microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 366-368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe nanoscale characterization of sol-gel produced ferroelectric thin films of lead–zirconate–titanate. We have performed quantitative localized measurements of surface polarization charge density using atomic force microscopy techniques in conjunction with electric field calculations. We show that domains with radii of 40 nm may by written and subsequently characterized, and we analyze the dependence of domain size on write voltage and write time, and show that surface contaminants influence the formation of domains. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125756
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