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  • 1
    Electronic Resource
    Electronic Resource
    Thermal reactions of Pd/AlxGa1−xAs contacts (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2891-2895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pd/AlxGa1−xAs Schottky contacts and their thermal reactions are studied by capacitance–voltage measurements, current–voltage measurements, and x-ray diffraction. The thickness of AlxGa1−xAs consumed by the Pd/AlxGa1−xAs reaction during annealing was calculated. For annealing temperatures below 300 °C the Schottky characteristics of the diodes were good but the electrical junction moves into AlxGa1−xAs after annealing. The amount of junction movement was calculated directly from our measurements. The diffusion coefficients of Pd in AlxGa1−xAs and the activation energy were estimated. The activation energy was found to be larger for higher Al concentration. PdAl, PdAs2, PdGa5, and Pd5Ga2 were detected in the compounds formed by the Pd/AlxGa1−xAs reaction after annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363141
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 366-371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance–voltage (C–V), current–voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C–V profiles. Pd starts to react with InAlAs at a temperature of 100 °C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366692
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  • 3
    Electronic Resource
    Electronic Resource
    Molybdenum silicide schottky contacts to GaAs (1991)
    Springer
    Journal of materials science 2 (1991), S. 28-33 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The thermal stability of MoSi x Schottky contacts to GaAs has been studied. The contacts were analysed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), sheet resistance, and current-voltage measurements. We have studied MoSi x with the compositionsx=0, 0.3, 0.6, 1, and 2. The films were annealed at various temperatures up to 850°C. The thermal stability of the films is found to bex-dependent. The best composition for thermally stable Schottky contacts is Mo5Si3. Good Schottky characteristics were retained with annealing temperatures up to 850°C for 30 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00695001
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    Paper (German National Licenses)
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