ISSN:
1572-8935
Keywords:
Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV)
;
Poly(methyl methacrylate) (PMMA)
;
Light emitting diode
;
Near-field scanning optical micrographs (NSOM)
;
Electroluminescence
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A significant improvement on the electroluminescence threshold voltage from 5.5 volts down to 2.9 volts of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) in the Ca/polymer/ITO diode is observed by incorporating a non-conjugated PMMA into MEH-PPV. The threshold voltage of the material decreases with the poly(methyl methacrylate) (PMMA) content. Near-field scanning absorption and photoluminescence micrographs show that the PMMA domains dispersed in the continuous MEH-PPV phase appear to be similar to sesame seeds embedded in the MEH-PPV pancakes. The resistivity of PMMA is two orders lower than that of MEH-PPV. The excellent electrical conduction of PMMA in Ca/PMMA/ITO glass devices is not due to a pin-hole defect mechanism but may result from the electron hopping from Ca through the carbonyl groups in the PMMA. The significant improvement in the threshold voltage may be due to the combination of the electron hopping in the thin PMMA sesame seeds and the thinner thickness effect of MEH-PPV in the light emitting layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s10965-006-0118-8
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