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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1713-1715 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of capacitance–voltage measurements are reported for metal–oxide–semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen (n) or aluminum (p). Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide–semiconductor interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Photochemistry and Photobiology A: Chemistry 48 (1989), S. 199-218 
    ISSN: 1010-6030
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 39 (1993), S. 1834-1846 
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A structured-geometry model for dispersed and graded deposits was developed for chemical vapor infiltration of multiply-woven substrates of carbon filters. An earlier model was modified to allow for two reactants in the feed. The model predicts gas-phase concentration profiles in the voids of substrates and deposition amounts of two reactants as a function of time and location. Results are shown for feeding reactant gases simultaneously for dispersed deposition and periodically for the study of the graded deposition for a typical substrate. The variation in relative contents of reactants in the feed with time shows how the composition of the deposit varies. Porosities and changes of dimensions with time everywhere in the substrate are also predicted. This is an advantage of the structured-geometry model vs. a simplified homogeneous geometry for the substrate. Such a simplification may preclude predicting failure, such as delamination, which would require a local description of the composite structure.Sensitivity to input parameters such as temperature, pressure, and reactant feed concentration is discussed, and two substrate geometries are compared.The behavior of the system is predicted to be dominated by the times to fill gaps between filaments at the ply surfaces and the outermost space between plies. Furthermore, faster kinetics and slower reactant diffusion favor deposition of one material near the surface of a ply or the matrix and the other near the center of the ply or matrix. By manipulating feed rates of reactants, uniformity of material and overall porosity of the composites are predicted to be enhanced.
    Additional Material: 15 Ill.
    Type of Medium: Electronic Resource
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