Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Fabrication of high frequency nanometer scale mechanical resonators from bulk Si crystals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2653-2655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a method to fabricate nanometer scale mechanical structures from bulk, single-crystal Si substrates. A technique developed previously required more complex fabrication methods and an undercut step using wet chemical processing. Our method does not require low pressure chemical vapor deposition of intermediate masking layers, and the final step in the processing uses a dry etch technique, avoiding the difficulties encountered from surface tension effects when wet processing mechanically delicate or large aspect ratio structures. Using this technique, we demonstrate fabrication of a mechanical resonator with a fundamental resonance frequency of 70.72 MHz and a quality factor of 2×104. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117548
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Very low noise photodetector based on the single electron transistor (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2820-2822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of the single electron transistor (SET) as an amplifier for a photodetector operated at 20 mK. The unparalleled low input noise of the SET permits the observation of very small numbers of charge carriers generated in a bulk p-type Si substrate. We present data showing the response of the detector when it is illuminated by extremely low levels of red light (λ=650 nm). From the "dark current'' noise of 0.06 e/s, we estimate a dc noise-equivalent power NEP=2×10−21 W/(square root of)Hz for infrared light with λ=30 μm, and from this calculate a detectivity D*=8×1017 cm⋅(square root of)Hz/W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108048
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Single-electron transistor as a radio-frequency mixer (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 532-534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the use of the single-electron transistor as a radio-frequency mixer, based on the nonlinear dependence of current on gate charge. This mixer can be used for high-frequency, ultrasensitive charge measurements over a broad and tunable range of frequencies. We demonstrate operation of the mixer, using a lithographically defined thin-film aluminum transistor, in both the superconducting and normal states of aluminum, over frequencies from 10 to 300 MHz. We have operated the device both as a homodyne detector and as a phase-sensitive heterodyne mixer. We demonstrate a charge sensitivity of 〈4×10−3 e/Hz, limited by room-temperature electronics. An optimized mixer has a theoretical charge sensitivity of (approximately-less-than)1.5×10−5 e/Hz. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1493221
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Thermal conductance and electron-phonon coupling in mechanically suspended nanostructures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 31-33 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and characterized the principal thermal properties of a mechanically suspended nanostructure, consisting of a micron-scale suspended GaAs island, upon which we have defined superconductor-insulator-normal metal tunnel junctions. The tunnel junctions allow for sensitive thermometry and heating of the electrons in a thermally isolated normal metal element, permitting the determination of the low-temperature thermal conductance of the legs that support the GaAs island, as well as the low-temperature electron-phonon coupling. This device forms the basis of a nanoscale bolometric detector, whose optical performance can be estimated from these measurements. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491300
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Single-crystal aluminum nitride nanomechanical resonators (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2070-2072 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum nitride is a light, stiff, piezoelectrically active material that can be epitaxially grown on single-crystal Si. AlN is beginning to play a role in the integration of semiconducting electronic and surface acoustic wave devices, and may prove useful for the integration of other types of mechanical devices as well. We describe the growth and subsequent electron-beam patterning and etching of epitaxial AlN-on-silicon films into nanomechanical flexural resonators. We have measured resonators with fundamental mechanical resonance frequencies above 80 MHz, and quality factors in excess of 20 000. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396633
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Nanophysics Carbon nanotubes tune up (2004)
    [s.l.] : Nature Publishing Group
    Nature 431 (2004), S. 251-252 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The simplest stringed musical instrument is the bow, similar to a hunter's bow — a string stretched on a frame so that, when plucked, it resonates and produces a note whose pitch is determined by the string's tension. On page 284 of this issue, Sazonova et al. demonstrate a ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/431251a
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    A nanometre-scale mechanical electrometer (1998)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 392 (1998), S. 160-162 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The mechanical detection of charge has a long history, dating back more than 200 years to Coulomb's torsion-balance electrometer. The modern analogues of such instruments are semiconductor-based field-effect devices, the most sensitive of which are cryogenically cooled single-electron ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/32373
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    An extremely low noise photodetector based on the single electron transistor (1993)
    Springer
    Journal of low temperature physics 93 (1993), S. 767-772 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have demonstrated the use of the single electron transistor (SET) as an amplifier for a photodetector operated at 20 mK. The unparalleled low input noise of the SET permits the detection of very small numbers of charge carriers generated in a bulk p-type Si substrate. We present data showing the response of the detector when it is illuminated by extremely low levels of red light (λ=650 nm). Although we are not able to prove that individual charge carriers are being detected in our system, the magnitude of the detector response and the level of noise in the system are in good agreement with single charge, and therefore single photon, detection. From the “dark current” noise of 0.06 electron/s, we estimate a noise-equivalent power NEP=2×10−21 W/√Hz for infrared light with λ=30 µm, and from this calculate a detectivity D*=8×1017 cm-√Hz/W.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00693510
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...