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  • 1
    Electronic Resource
    Electronic Resource
    Vacuum ultraviolet emission dynamics of a coplanar electrode microdischarge: dependence on voltage and Xe concentration (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 682-689 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report nanosecond time-resolved measurements of the vacuum ultraviolet (VUV) emission and current waveforms for a planar, surface-discharge plasma display electrode in Xe/Ne mixtures. The 173 nm excimer emission is separately resolved from the overall VUV emission by a removable fused silica filter. The time difference between the maximum of excimer emission and that of resonant atomic emission is measured at high Xe concentration. The decay time of the overall VUV emission decreases strongly as the Xe concentration increases due to three-body collisions leading to Xe2 formation. The decay time constants versus Xe concentration and pressure are measured and compared with published rate constants. The efficiency of VUV emission increases rapidly from 4% to 10% Xe, but only marginally with further increase to 30% Xe. For fixed Xe ratio, the VUV emission efficiency drops with increasing driving voltage. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1486041
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of Cu-doped CdTe and related stability issues in CdS/CdTe solar cells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2490-2496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore Cu electronic states in CdTe using photoluminescence as the main investigative method. Our results are consistent with some Cu atoms occupying substitutional positions on the Cd sublattice and with others forming Frenkel pairs of the type Cui+–VCd− involving an interstitial Cu and a Cd vacancy. In addition, we find that Cu-doped CdTe samples exhibit a significant "aging" behavior, attributable to the instability of Cu acceptor states as verified by our Hall measurements. The aging appears to be reversible by a 150–200 °C anneal. Our results are used to explain efficiency degradation of some CdTe solar-cell devices which use Cu for the formation of a backcontact. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287414
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  • 3
    Electronic Resource
    Electronic Resource
    Plasmons, photoluminescence, and band-gap narrowing in very heavily doped n-GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 147-149 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of extremely heavily doped n-GaAs are examined. Metastable electron concentrations up to 3.2×1019 cm−3 were produced by pulsed-laser annealing of Si-implanted GaAs. These very heavily doped layers give plasmon Raman shifts up to 1700 cm−1 and photoluminescence bandwidths of greater than 410 meV. The low-energy edge of the photoluminescence indicates a band-edge narrowing proportional to ∼n1/3 and equal to ∼200 meV at the highest electron concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103967
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  • 4
    Electronic Resource
    Electronic Resource
    Resonant Raman studies of structural ordering in Hg1−xCdxTe: Dependence on growth conditions (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1055-1057 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resonant Raman scattering with photon energies between 2.35 and 2.7 eV has been used to study both the alloy composition and local structural order in Hg1−xCdxTe for x values near 0.25 and for samples prepared by bulk growth, liquid phase epitaxy, molecular beam epitaxy, and metalorganic chemical vapor deposition. The resonance behavior of the HgTe-like transverse optical and longitudinal optical (LO) modes, the CdTe-like LO mode, and that of an additional mode probably due to preferential clustering of three Hg and one Cd about the Te sites, all indicate strong enhancement at the E1 edge. However, surfaces annealed with a Nd:yttrium-aluminum-garnet-pumped dye laser show strong suppression of the cluster mode (but not the LO mode) in all samples, which suggests that extremely rapid epitaxial regrowth may inhibit the 3:1 cluster formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102613
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  • 5
    Electronic Resource
    Electronic Resource
    Improvement of CdTe solar cell performance with discharge control during film deposition by magnetron sputtering (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2920-2925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a combination of rf and dc excitation to control the plasma density during planar magnetron sputter deposition of CdTe films and CdTe-based solar cells. While adding dc current we have adjusted the rf power to maintain a constant deposition rate. We find that the lower plasma density obtained with negative dc currents yields films with a more highly faceted surface, more columnar growth structure, and stronger photoluminescence. The solar cells prepared with rf sputtered CdS and with CdTe deposited at reduced rf power and −70 mA of dc current produce substantially higher performance. The results indicate advantages to reducing the ion bombardment energy and flux to the growing film by the addition of dc control during rf sputtering from highly insulating semiconductor targets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368397
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  • 6
    Electronic Resource
    Electronic Resource
    Rutherford backscattering study of sputtered CdTe/CdS bilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1722-1726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rutherford backscattering (RBS) and x-ray photoelectron spectroscopy (XPS) were used to investigate interdiffusion and surface properties of CdS/CdTe bilayers. The films were grown by radio-frequency sputtering and received postdeposition heat treatments similar to the ones employed in CdTe solar cell fabrication. It is found that a CdCl2 anneal strongly enhances both the diffusion of S into the CdTe layer and the surface oxidation. The diffusion of S in CdTe in this process can be described by a constant surface source model with the diffusivity given by D=3.2×10−5 exp(−1.2 eV/kT) cm2 s−1 in the temperature range studied. The change in the chemical composition of the surface following the CdCl2 anneal was analyzed by XPS showing that Te oxides and residual compounds containing Cl were present which could account for the straggling in the RBS spectrum. An HCl etch completely removes oxides and residues leaving a smooth surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372083
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  • 7
    Electronic Resource
    Electronic Resource
    Excimer and dye laser annealing of silicon-nitride-capped, Si-implanted GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2561-2563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2×1014/cm2 at 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ=728 nm) or a XeCl excimer laser (λ=308 nm). Dye-laser annealing through a ∼55-nm-thick Si3N4 cap consistently produced higher activations than excimer-laser annealing with or without the cap. Carrier densities were measured by phonon-Raman and plasmon-Raman scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339448
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  • 8
    Electronic Resource
    Electronic Resource
    Pulsed laser heating of silicon-nitride capped GaAs: Optical properties at high temperature (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2591-2594 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of silicon nitride and gallium arsenide were studied at temperatures up to and beyond the melting point of GaAs by means of laser heating. XeCl excimer and pulsed dye laser pulses, ∼10 ns in duration, were used to heat the semiconductor under nitride capping layers of varying thickness. The transient reflectivity response at 514.5 nm was used together with a multilayer interference analysis to obtain the optical constants of solid and molten GaAs and of solid Si3N4 near the 1513-K melting point of GaAs. In addition, we report the melt duration as a function of laser pulse energy for GaAs with and without capping layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341647
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  • 9
    Electronic Resource
    Electronic Resource
    Raman analysis of short-range clustering in laser-deposited CdSxTe1−x films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2559-2561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman line shapes of the longitudinal optical phonon have been analyzed for the pseudobinary alloy system CdSxTe1−x over the full alloy range. The polycrystalline thin films were grown by pulsed laser deposition at, typically, 370 °C including films with x values throughout the miscibility gap (0.06〈x〈0.97). Peak shift, broadening, and asymmetry arising from spatial correlation effects yield details of the microstructural clustering. The dependence of phonon coherence length on the x value cannot be explained simply from a random occupancy of the anion sublattice. We employed a linear chain model with site probabilities modified by the Warren–Cowley short-range order parameter to infer coherence lengths versus x. The data are best fit with a short-range order parameter of 0.73 at x=1/2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121417
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  • 10
    Electronic Resource
    Electronic Resource
    Radio-frequency-magnetron-sputtered CdS/CdTe solar cells on soda-lime glass (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3045-3047 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication of an 11.6% efficient, polycrystalline thin-film CdS/CdTe solar cell in which both semiconductor layers were deposited by planar-magnetron-radio-frequency sputtering at 380 °C on commercially available soda-lime float-glass substrates coated with SnO2:F. We show that the magnetron magnetic field is critical to obtaining high cell efficiency. Much stronger photoluminescence and higher electrical conductivity are found in films and cells grown with unbalanced-field magnetrons. The magnetic field dependence is interpreted as arising from the enhanced electron and ion bombardment of the film growth interface when unbalanced magnetrons are used. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116834
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