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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3717-3717 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3492-3494 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth manipulation methods, which have been successfully used to improve the growth of homoepitaxial films, are applied to molecular beam epitaxy of the heteroepitaxial system Ni/Cu(111). The procedures applied are temperature reduction during nucleation and pulsed ion bombardment during deposition. While the first does not lead to smoother films, the ion beam assisted growth is successful in reducing the film roughness. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 52-57 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of detector for the determination of absolute molecular-beam intensities is described. The intensity is obtained from the work done on a cylindrical rotating body by the torque exerted by the impinging beam particles. The detector takes advantage of the very low and constant bearing friction of magnetically suspended rotors and of the complete particle momentum accommodation on uncleaned surfaces. The detection limit of the present design is Imin0 =1.2×1015/Mv˜, where M is the atom mass and v˜ the average velocity of the beam particles in ms−1. The molecular-beam detector turns out to be an absolute instrument. Principle, experimental performance, and measurements with helium nozzle beams are reported.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4135-4139 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report on the construction of a variable temperature scanning tunneling microscope (STM) operating from 20 to 700 K in UHV, which routinely allows one to image dense packed metal surfaces in atomic resolution down to the lowest temperature. Central problems in designing a variable temperature STM are discussed in some detail. Methods to achieve efficient vibration isolation between the cryostat and the STM are presented. Furthermore, a sample and sample holder assembly is described, which ensures long-term mechanical stability and STM imaging, while subject to extreme temperature variations. The temperature response of the STM while cooling and heating the sample is measured and will be discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3204-3210 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report on the construction of an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) specially designed for operation in the entire range of sample temperatures between 10 and 400 K. The sample is cooled by means of a liquid helium continuous-flow cryostat, while the supporting manipulator and the surrounding devices remain at room temperature. This allows rapid variation of the sample temperature. The standard instruments for surface preparation and analysis and the STM are contained in a single UHV chamber. By rotation of the manipulator the sample can be positioned in front of any of these instruments without changing the sample temperature. The performance of the microscope is demonstrated by two examples of images of xenon adsorbed on platinum(111) showing: (a) the evolution of the morphology of a submonolayer of xenon from adsorption at 17K up to desorption at about 90 K and (b) atomically resolved images of the hexagonal incommensurate rotated phase for xenon at monolayer completion.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 760-764 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A low-energy impact collision ion (neutral) scattering spectrometer [(N)ICISS] for exact 180° backscattering has been developed. The energy distribution of the backscattered particles is measured with the time-of-flight method (TOF). 180° backscattering spectra are compared with 145°/140° ones. The nearly identical trajectories for incoming and backscattered particles result in the main advantage of 180° NICISS, namely, a quasi-double focusing effect leads to extremely well behaved peaks in the measured angular patterns.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 369-372 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-intensity supersonic nozzle beam source is described, whose beam energy can be varied between 2 and 170 meV (helium). Experimental performance and time-of-flight measurements on cold helium beams are reported. Condensation in the free jet expansions of helium has been studied by mass spectrometric detection of He+2. A correlation between the maximum speed ratio and the onset of clustering is observed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 2771-2779 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-resolution apparatus designed for the study of elastic and inelastic scattering of thermal helium atoms from crystal surfaces is presented. The highly expanded He nozzle beam has an energy spread ΔE/E of about 1.4% and is collimated to 0.2°. The angle subtended by the detector opening as seen from the sample is also 0.2°. Beam intensities as low as 10−6 of the specular beam intensity from a low-temperature clean Pt(111) surface are detectable. Pseudorandom chopping with a resolution of 2.5 μs (flight path 790 mm) is used for time-of-flight (TOF) analysis of the scattered helium. The base pressure in the sample chamber is in the low 10−11 mbar. The capabilities of the apparatus are demonstrated for physisorbed Xe adlayers on Pt(111). The results presented are obtained by using He scattering in various modes: coherent inelastic, coherent elastic, and incoherent (diffuse) elastic. This technique allows for a nondestructive nearly exhaustive characterization of the thermodynamics, structure, and dynamics of physisorbed adlayers on arbitrary substrates.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3209-3211 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation of Pt films grown by ion beam assisted deposition on Pt(111) has been studied by scanning tunneling microscopy. At temperatures T≥200 K, the simultaneous ion bombardment during vapor phase deposition leads to a substantial increase in the island number density caused by nucleation at ion impact induced adatom clusters. This increase is observed even in the higher temperature range where after ion bombardment alone the ion impact induced adatom clusters are no longer present. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 182-184 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During ion beam sputter deposition besides the deposited atoms, which reach the substrate with kinetic energies in the 10 eV range, a certain amount of energetic particles also hit the substrate. These particles which have been reflected or sputtered at the target represent only a small fraction of the atoms reaching the substrate, but have energies of the order of the sputtering beam. The influence of these particles on the island formation of Pt films on a Pt(111) surface has been examined by variation of the deposition geometry, the primary ion energy, and the substrate temperature. It is demonstrated that the main effect is a dramatic increase in island density. The experimental results are in quantitative agreement with the results of a newly developed computer code. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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