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  • 1
    Electronic Resource
    Electronic Resource
    Effects of aluminum doping upon color formation in zinc oxide powders (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4685-4690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects on the reflectance spectra of zinc oxide powders, of heat treatment, and of mechanical grinding were investigated for both undoped and aluminum-doped ZnO. A broad absorptance band at 390–400 nm was induced in the undoped powders both by heating in air and by grinding. From a comparison with electron paramagnetic resonance data from the literature, the band could be related to oxygen vacancies. It was found that aluminum doping suppresses the band formation induced by grinding; however, the doping does not suppress the band formation induced by heat treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354360
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  • 2
    Electronic Resource
    Electronic Resource
    Photocapacitance and photoconductance of Bi-doped ZnO (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4011-4016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density of occupied interface states as a function of energy in nonohmic polycrystalline Bi-doped ZnO was obtained using photocapacitance measurements. Peaks in the interface states' densities were observed at depths of 2.46 and 2.79±0.08 eV from the bottom of the conduction band. The combination of these two states was found in photoconductance measurements on Bi-doped samples of ZnO and not found in undoped samples; thus, these states were assumed to be related to interface states that arise from doping with Bi.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348435
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  • 3
    Electronic Resource
    Electronic Resource
    Optical reflectance of aluminum-doped zinc oxide powders (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 959-964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in the electronic properties of zinc oxide powders doped with aluminum were related to the optical reflectance characteristics. ZnO powders doped as a solid solution, having from 0.035 to 1.00 mol % Al, were characterized. Diffuse optical reflectance was measured over near-ultraviolet and visible wavelengths from 340 to 700 nm. Diffuse infrared reflectance was used to characterize the free-electron density in each powder. Free-electron densities ranged from 2.5×1014 cm−3 for undoped ZnO to 3.5×1017 cm−3 for the 1.00-mol % Al powder. The Al-doped powders showed significant resistance to color center formation, whereas the undoped powder did not. The suppression of the optical absorption at approximately 400 nm in the Al-doped powder may be related to the suppression of a band state to localized defect state charge transfer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347340
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Grain-boundary interface electron traps in commercial zinc oxide varistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6495-6500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the electronic characteristics of grain-boundary interface states was performed on a commercial zinc oxide varistor material using zero-bias deep level transient spectroscopy, current-voltage, high-frequency capacitance, and infrared reflectance techniques. Interface states, which act as deep acceptors, were found to exist at 0.97±0.12 eV below the conduction-band edge. The capture cross section is approximately 4×10−15 cm2. Characteristics of the interface states were determined as a function of the voltage of the trap filling pulse, which was varied from 0.9 to 2.0 V per grain boundary. It is shown that the trap energy is independent of the voltage of the pulse, while the apparent trap density increases with increasing voltage from 1.9 to 7.4×1011 cm−2. The results presented here indicate that this interface level is monoenergetic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346848
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of deep levels in zinc oxide (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1781-1783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron trap of 0.3 eV depth was characterized in hydrothermally grown, single-crystal zinc oxide using deep-level transient spectroscopy. Specimens were fabricated with Ag Schottky contacts on (0001) surfaces. The capture cross section was determined to be 2.6×10−14 cm2. The defect is a native donor and is attributed to a singly ionized oxygen vacancy V•O.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339919
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  • 6
    Electronic Resource
    Electronic Resource
    Radiation hardness of zinc oxide varistors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 429-431 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage characteristics of zinc oxide varistors were examined prior to and after exposure of up to 107 rad (Si) of 60Co gamma radiation. Nominal voltage, current-voltage nonlinearity, and leakage currents remain relatively unaffected by large doses of ionizing radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338842
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  • 7
    Electronic Resource
    Electronic Resource
    Bulk electron traps in zinc oxide varistors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4186-4190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three types of commercial zinc oxide varistor materials were examined using admittance spectroscopy between 30 and 350 K. Maxima in the ac conductance at frequencies from 1 to 100 kHz are observed. The maxima are interpreted as arising from electron traps located within the depletion regions of double Schottky barriers at ZnO-ZnO grain boundaries. Two traps are observed in each material and are likely to be from common origin. The trap energies are found to be 0.17 and 0.33 eV below the conduction-band edge. The traps are likely to be associated with native defects in ZnO and may influence device characteristics such as voltage overshoot.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337504
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  • 8
    Electronic Resource
    Electronic Resource
    Defect clusters in zinc oxide (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6760-6763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present new evidence that two electron traps observed in polycrystalline zinc oxide can be associated with complex intrinsic defects. One deep level, E1, can be assigned to an oxygen vacancy. The second deep level, E2, could consist of a cluster-type defect associated with oxygen vacancies. The two traps were characterized using deep-level transient spectroscopy. The energies of these traps are 0.15 and 0.24 eV, the capture cross sections are 4×10−18 and 1×10−17 cm2, and the emission rates at 300 K are 2.0×106 and 1.3×105 Hz, respectively. The relative concentrations of these traps varied uniformly as a function of the cooling rate of the zinc oxide from a sintering temperature of 1300 °C. The concentration of E1 decreased, while the concentration of E2 increased, with decreasing cooling rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345114
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