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  • 1
    Electronic Resource
    Electronic Resource
    Band edge optical absorption in intrinsic silicon: Assessment of the indirect transition and disorder models (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3988-3996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two competing theories of the optical absorption edge of intrinsic crystalline silicon, the indirect transition theory, and the recent disorder (Urbach edge) theory, are assessed critically. The assessment of the indirect transition theory includes an attempt to predict, by the use of the luminescence spectrum and the principle of detailed balance, the optical absorption in the wavelength range where it is mediated by the simultaneous absorption of up to three phonons. The inability of this method to accurately reproduce the experimental data is used to illustrate limitations of the indirect transition theory: its neglect of band degeneracy and its failure to explain the different absorption replica shapes for different phonons. In its published form, the disorder theory does not explicitly address the question of the role of indirect processes or the nature of the strong transitions which trigger the disorder processes. Some of the evidence presented in favor of the theory is shown to be in doubt. The possible synthesis of the two theories is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352864
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Band edge optical absorption in intrinsic silicon: Assessment of the indirect transition and disorder models'' [J. Appl. Phys. 73, 3988 (1993)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6462-6462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355344
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  • 3
    Electronic Resource
    Electronic Resource
    Junction recombination current in abrupt junction diodes under forward bias (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3083-3090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new, analytical method is presented for calculating the depletion-region recombination current for abrupt-junction diodes under forward bias. The method is appropriate when the recombination current is dominated by recombination through Shockley–Read–Hall centers at a single energy level whose density does not vary strongly with position through the device. The new model is systematically compared with earlier models and with the results of finite-element analyses using PC-1D. If it is reasonably assumed that PC-1D is the most accurate of the methods considered here, the others may be ranked according to their proximity to the PC-1D result. It is shown that the new method, despite its simplicity, yields results closer to PC-1D than the earlier models for many practical situations. In addition, it is shown that one existing model may be brought into agreement with the finite-element analysis by a simple modification of the limits of integration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363168
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  • 4
    Electronic Resource
    Electronic Resource
    Excitons in silicon diodes and solar cells: A three-particle theory (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 195-203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent work has indicated that a significant number of electrons and holes remain in the free-exciton form in silicon at room temperature, a finding which, if supportable by experimental evidence, requires the inclusion of excitons in diode and solar cell theory. Excitons, although neutral, may contribute to device currents by diffusing to the junction region where they may be dissociated by the field. A generalized three-particle theory of transport in semiconductors is presented. The results of application of the theory to silicon devices indicate a decrease in the dark saturation current as well as an increase in light-generated current when excitons are incorporated in the theory so long as exciton diffusion length exceeds that of the minority carriers. The work includes suggestions for experimental methods to confirm exciton involvement and to estimate the value of the exciton-binding parameter from spectral response measurements on solar cells. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360931
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  • 5
    Electronic Resource
    Electronic Resource
    Quantitative interpretation of electron-beam-induced current grain boundary contrast profiles with application to silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5473-5481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improved method is described for extracting material parameters from an experimental electron-beam-induced current (EBIC) contrast profile across a vertical grain boundary by directly fitting an analytical expression. This allows the least-squares values of the grain boundary recombination velocity and the diffusion length in each grain to be determined without the need for the reduction of the experimental profile to a few integral parameters, as is required in a previously reported method. Greater accuracy of the extracted values is expected since none of the information contained in the experimental contrast data is discarded and a less extensive spatial range of measured data is required than in the commonly used method. Different models of the carrier generation volume are used in the fitting and the effect of the choice of generation model on extracted values is investigated. In common with other EBIC approaches, this method is insensitive to changes in the diffusion length when the collection efficiency is high and diffusion lengths may not be reliably established in those cases. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368310
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