Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 676-681
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-resolution electron microscopy technique has been applied to a detailed study of the 60° dislocations at the atomic layer molecular-beam-epitaxial GaAs/Si interface. Their deformation fields strongly interact with neighbor dislocations inducing irregular spacing between the cores and possible dissociations. Biatomic silicon steps were observed at the interface, but never inside 60° dislocation cores. Computer image simulation and elasticity calculations of the atomic displacement field have been used in order to determine the structure of the 60° dislocation; however, due to the Eshelby effect and to interaction with some neighbor dislocations, in many cases no theoretical model could explain some observations. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360812
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