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Effects of metalorganic chemical vapor deposition growth conditions on the GaAs/Ge solar cell properties (1991)

Chen, J. C. ; Ristow, M. Ladle ; Cubbage, J. I. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 2282-2284

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have studied the effects of metalorganic chemical vapor deposition (MOCVD) growth conditions on the properties of GaAs solar cells grown upon Ge substrates, and in particular the GaAs/Ge interface. The interface properties were found to strongly depend on growth conditions. By small changes in the growth temperature, the GaAs/Ge interface was altered from active to passive. Only a narrow temperature window (600–630 °C) for the initial GaAs layer growth gave the passive-Ge junction together with good surface morphology. Accordingly, a high efficiency (19%, AM0) GaAs solar cell was grown by atmospheric pressure MOCVD on a Ge substrate without any junction in the Ge.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.104899

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