Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    X-ray diffraction of nonuniform GexSi1−x/Si strained-layer superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7955-7956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GexSi1−x/Si strained-layer superlattices have been studied by means of double-crystal x-ray rocking curves. Double peaks in the same order superlattice reflections or strong oscillation fringes near the superlattice peaks were observed in the rocking curves for two different samples. Good agreement between theoretical simulations and their experimental counterparts were obtained. Our results demonstrate that these phenomena are attributed to serious local variation in layer thickness and composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353949
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    X-ray diffraction analysis of Si1−xGex/Si superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3474-3479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−xGex/Si strained-layer superlattices grown by molecular-beam epitaxy on Si substrates were investigated by x-ray double-crystal diffraction and x-ray grazing incidence diffraction. Both coherent and incoherent interfaces between the two components of the superlattices were observed. By fitting computer-simulated double-crystal x-ray-diffraction rocking curves to the experimental data, it is determined that there exist graded variations in both the component thickness ratio t1/t2 (t1 and t2 are the thickness of the Si1−xGex and the Si layers, respectively) and the fraction x in one sample. The x-ray grazing incidence diffraction experiments reveal a lattice strain relaxation of about 27% in another sample. The lattice relaxation and the influence of variations of x and t1/t2 on the rocking curves are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351423
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Determination of surface roughness of InP (001) wafers by x-ray scattering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4154-4158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357366
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Interference effects in x-ray double-crystal rocking curves of GexSi1−x/Si superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1320-1322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interference effects in the x-ray double-crystal rocking curves of GexSi1−x/Si strained-layer superlattices have been simulated based on the x-ray dynamical scattering theory. We found that the A1BA2 type of structure due to unstable growth conditions causes a series of strong oscillation fringes beside the superlattice reflection satellite peaks. The positions and intensities of these oscillation fringes with respect to the superlattice satellite peaks are strongly correlated to the number of periods in the subsuperlattice layer B and the relative mean lattice mismatch between A and B with respect to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357794
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    X-ray analysis of strain relaxation in strained-layer superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 810-814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical simulations of x-ray double-crystal-diffraction rocking curves for strain-relaxed superlattices have been successfully carried out based on x-ray dynamical diffraction theory. The strain relaxation, the misorientation between the superlattice layers and the substrate, and the effect of peak broadening due to the formation of misfit dislocations have been taken into account. The influence of possible strain relaxation mechanisms and relaxation ratios on the rocking curves have been investigated. It was found that both the mechanism and degree of the strain relaxation of the superlattice can be determined by fitting the angular positions and the relative intensities of the experimental superlattice satellites. By using this method, an InxGa1−xAs/GaAs superlattice sample and a GexSi1−x/Si superlattice sample were analyzed. The different strain-relaxation mechanisms were found in these two samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357754
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    X-ray reflectivity studies of the effect of surfactant on the growth of GeSi superlattices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1681-1684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reflectivity is applied to investigate the effect of a surfactant on the growth of Ge1−xSix/Si superlattices. It is demonstrated that the antimony layer deposited on the surface can effectively prevent the intermixing of silicon and germanium. The specular reflectivity curves show that the width of the interface is sufficiently reduced by the surfactant. The transverse scans show that the interface roughening exponent h for the sample with surfactant is larger than for the sample without surfactant, and the in-plane correlation length for the former is much larger than for the latter. This indicates that the surfactant makes less jagged and smoother interfaces and induces a different surface growth mode. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360264
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2981-2983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a study of interfacial structure of GaN films grown on GaAs(001) substrates by plasma-assisted molecular beam epitaxy using x-ray grazing-angle specular reflection. We show that interfacial layers with electron densities differing from those of GaN and GaAs were formed upon deposition of GaN. It is also found that the interfacial structure of our systems depends strongly on the course of the initial layer deposition. The phase purity of the GaN films was examined by x-ray reciprocal space mapping. A simple kinetic growth model suggested by our results has been presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123986
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Surface scattering of x rays from InP (001) wafers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3317-3319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the surface scattering of x rays from mechanical-chemical polished InP (001) wafers with sulfur and/or iron doping. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model was proposed to explain the experimental data. The results were also compared with those obtained from crystal truncation rod measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112446
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    A new scheme for x-ray grazing incidence diffraction (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2419-2423 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new scheme for x-ray grazing incidence diffraction (GID) under total external reflection conditions is presented. This simple scheme allows the grazing angles and the scattering angles to be adjusted independently so that the structural and/or the chemical profiles of materials can be determined at controlled depths. As an example, Si1−xGex/Si superlattice materials were studied. Both commensurate and incommensurate growths between the two quantum wells in the strained-layer superlattice were observed by the GID technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142257
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Study of thermal behaviour of oxygen in silicon crystals by analysis of X-ray Pendellösung fringes (1994)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 50 (1994), S. 725-730 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The thermal behaviour of oxygen in Czochralski (CZ) silicon and magnetic Czochralski (MCZ) silicon crystals was investigated by analysis of Pendellösung sung fringes based on the statistical theory of X-ray dynamical diffraction. The size and the density of oxygen precipitates were determined for different annealing temperatures and/or different times. It was observed that oxide precipitates in the samples increase in size and decrease in density with time during isothermal annealing at 1023 K. The precipitation in MCZ silicon approaches saturation level after annealing for 250 h. It was found that the size of precipitates increases rapidly with annealing temperature in isochronal annealing for 18 h. Comparison of the results of MCZ silicons with those of CZ silicons shows that MCZ crystals are thermally more stable. This suggests that magnetic fields can control the oxygen concentration effectively and that the MCZ and CZ silicon have different thermal behaviours. A powerful technique for detecting microdefects of nanometre size and random distribution is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767394004332
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...