ISSN:
1573-7357
Keywords:
68.65.+g
;
74.50.+r
;
85.25.-j
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A Josephson junction Nb/Si/Nb with a 10 nm thick amorphous silicon barrier is studied. The upper electrode contains a 2 nm thick sublayer of amorphous phase adjacent to the barrier, as revealed by cross-sectional TEM. Thus, the junction can be considered as a S-I-N-S system with the N layer represented by amorphous niobium. Peculiarities in the I–V and Δ(T) dependencies are observed and explained as a consequence of a proximity effect present in the upper electrode.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02399642
Permalink