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  • 1
    Electronic Resource
    Electronic Resource
    Raman investigations of the surface modes of the crystallites in CdS thin films grown by pulsed laser and thermal evaporation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8402-8404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdS films have been grown on Corning glass by pulsed laser evaporation (PLE) and thermal evaporation (TE) techniques at a substrate temperature between room temperature and 250 °C. The quality of these films is investigated by resonance Raman scattering, x-ray diffraction and optical transmittance. Our results reveal that the Raman shifts of the surface phonon mode are observed with 300 and 297 cm−1 by PLE and TE techniques, respectively, and as many as four overtones are obtained by PLE method. The difference of Raman shift between these two techniques are caused by the discrepancy of crystallite sizes which is larger for PLE technique. The crystallite sizes are in the range of 200–500 A(ring) in diameter. Highly oriented films have been grown by both of the techniques even when the substrate is at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347405
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of the transverse optical phonon mode in CdS film at 4880 A(ring) excitation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3056-3058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transverse-optical (TO) phonon mode in a CdS film with a thickness less than 410 A(ring) is observed at 4880 A(ring) excitation wavelength which is above the band gap of CdS bulk (2.42 eV) at room temperature. This phenomenon is ascribed to the size quantization of the free carrier in the low-dimensional thin-film structure. The quantum size effect causes a blue shift of the band gap in the as-deposited CdS thin film. The Raman shift of the TO mode of CdS film is around 220 cm−1. The softening energy of the TO phonon mode is about 8 cm−1. It was found that this softening energy is independent of the film thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350995
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  • 3
    Electronic Resource
    Electronic Resource
    Interfacial structure and dopant redistribution of a tungsten polycide/N+ silicon substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2543-2547 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphology and redistribution of dopants at the interfaces between silicon-implanted, low-pressure chemical-vapor-deposited silicon films with an n+ single-crystal silicon substrate are described. Using high-resolution transmission electron microscopy, it is shown that silicon implantation definitely lowers the annealing temperature needed to break up the native oxide layer. A post annealing temperature of 900 °C for 30 min, which is acceptable for sub-μm processes, is sufficient to cause the break up of the native oxide layer and the subsequent epitaxial growth through it with the aid of silicon implantation. The depth profile obtained by secondary ion mass spectrometry shows that the implanted dopants were piled up at the interfacial layer after thermal treatment. The redistributed profiles of impurities depend on the concentration of oxygen. The junction depth of the silicon-implanted polysilicon films is shallower than that of the unimplanted films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353088
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  • 4
    Electronic Resource
    Electronic Resource
    Composition and chemical reactions of titanium oxide films deposited by laser evaporation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3766-3768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films were deposited on Pyrex glass substrates from Ti and TiO2 targets at room temperature by laser evaporation technique. These films were characterized by scanning electron microscopy, Auger electron spectroscopy, and depth profile analysis. The films deposited from Ti target are TiCx and TiOy matrix, while films from TiO2 target are almost stoichiometric in oxygen. The films have a smooth surface morphology under a laser power density of 5 × 106 W/cm2, which is close to the critical intensity for evaporation. The interface reaction of these films is strong, and the Ti atoms diffuse into the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348473
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of highly oriented tin oxide thin films by laser evaporation deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1879-1881 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder-pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 μm. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 A(ring) per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10−3 Ω cm. The visible transmittance (between 4000 and 7000 A(ring)) is above 75%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103998
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  • 6
    Electronic Resource
    Electronic Resource
    Parametric optimization of an easily constructed pulsed xenon-ion laser (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3713-3715 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An easily fabricated xenon-IV ion laser is described. The various parameters considered are the gas pressures, the excitation voltages, and the repetition rates. Based on our results we believe that there exists an optimal excitation voltage and an optimal repetition rate for achieving largest lasing power and good reliability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141539
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  • 7
    Electronic Resource
    Electronic Resource
    Raman intensity enhancement of the Si peak by CdS thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3273-3275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method, which utilizes interference enhanced Raman scattering and resonant Raman scattering techniques, is used to overcome the low efficiency of Raman methods to diagnose highly reflective materials. As applied to the p-type Si wafer, the enhanced gain is up to nearly a factor of 80 at 4880 A(ring) excitation. Because of the strong absorption of the scattered light, it is recommended that the suitable deposited thickness of CdS films should not be thicker than 700 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105728
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  • 8
    Electronic Resource
    Electronic Resource
    Shallow donor impurity states of a semiconductor in a uniform magnetic field
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 172 (1991), S. 445-451 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(91)90004-X
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