ZIB

1

Digitale Medien

Pulsed anodic oxides for III-V semiconductor device fabrication (1994)

Grove, M. J. ; Hudson, D. A. ; Zory, P. S. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 587-589

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A simple procedure for the rapid formation of uniform native oxides on various III-V semiconductor materials is described. A pulsed applied potential drives an anodic oxide formation process on the semiconductor immersed in a glycol:water:acid solution. Uniform oxides up to 2000 A(ring) thick can be grown in a few minutes at room temperature and used to define areas for current injection into the semiconductor. AlGaAs diode lasers fabricated with 50-μm-wide current stripes defined by pulsed anodic oxide had threshold current densities substantially lower than lasers fabricated with 50-μm-wide stripes defined by chemical-vapor-deposited SiO2.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.357047

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

2

Digitale Medien

Single quantum well laser with vertically integrated passive waveguides (1990)

Chen, Y. C. ; Waters, R. G. ; Dalby, R. J.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 1409-1411

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The condition for the fundamental mode operation in a single quantum well laser with vertically integrated passive waveguides has been studied. With proper choice of parameters, transverse beam divergence as low as 19° has been achieved.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.102483

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

3

Digitale Medien

Full-aperture, high-power semiconductor laser (1989)

Waters, R. G. ; Dalby, R. J. ; Emanuel, M. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 2534-2535

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A single quantum well laser with a 2-mm-wide aperture has exhibited low threshold current density and nearly 100% packing fraction. The lateral structure relies on epitaxial growth on a corrugated substrate to frustrate radiative lateral processes and it thus eliminates the need for isolation at least for incoherent operation. Threshold current densities are comparable to those for low-power devices, and slope efficiencies remain undiminished to our current limit where 10.7 W per facet is attained. The aperture size is limited only by our fixturing arrangement.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.101066

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

4

Digitale Medien

Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxy (1987)

Cammack, D. A. ; Dalby, R. J. ; Cornelissen, H. J. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 62 (1987), S. 3071-3074

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report the first operation of molecular-beam epitaxy (MBE) grown ZnSe/ZnSxSe1−x superlattice electron beam pumped lasers in the temperature range 100–300 K and the first room-temperature operation of MBE grown ZnSe on GaAs transverse geometry electron beam pumped lasers. Threshold current densities of 2.5 A/cm2 at 100 K were achieved by both devices. At room temperature, threshold current was 5 A/cm2 for the ZnSe devices and 12 A/cm2 for the superlattice.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.339352

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

5

Digitale Medien

Integrated quantum-well manifold laser (1989)

Waters, R. G. ; Emanuel, M. A. ; Dalby, R. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 961-963

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: An integrated manifold of quantum-well lasers with up to three quantum wells has been fabricated by metalorganic chemical vapor deposition. cw threshold current densities per well and differential quantum efficiencies are comparable to those for individual devices, and transverse far-field patterns are single lobed. Catastrophic optical damage levels increase with increasing quantum-well count and are substantially higher than those achieved with a single quantum-well laser. Thermal effects in cw operation have been mitigated by using an efficient design with a high characteristic temperature in a low thermal resistance configuration.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.343472

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext