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  • 1
    Electronic Resource
    Electronic Resource
    Structural studies of nanoporous carbon produced from silicon carbide (1999)
    Springer
    Physics of the solid state 41 (1999), S. 808-810 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract X-ray diffraction and small-angle scattering study of nanoporous carbon samples prepared from polycrystalline α SiC and single-crystal 6H SiC is reported. The distribution function of carbon nanoclusters in size was found. In α SiC samples, the small size (10–12 Å) of nanoclusters is combined with their high size uniformity. Graphite-like nanoclusters 30–60 Å in size were found in samples of both types. In 6H SiC samples, such clusters make up a notable fraction of the volume. The experimentally observed structural anisotropy of the samples is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130879
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  • 2
    Electronic Resource
    Electronic Resource
    On fractal nature of the structure of nanoporous carbon obtained from carbides (2000)
    Springer
    Physics of the solid state 42 (2000), S. 1176-1181 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The curves describing small-angle x-ray scattering at npor-C nanoporous carbon samples obtained from polycrystalline α-SiC, TiC, and Mo2C and a 6H-SiC single crystal have been analyzed. An algorithm is developed for taking into account the corrections to experimental curves for the intensity of the primary beam transmitted through the sample and the height of the inlet slit in these measurements. Two systems of nanoclusters observed in the npor-C structure differ in the type of stacking of structural elements: small-scale mass fractals of a dimension 1〈D 2〈3 and a size L 2=50–90 Å, which depend on the type of the initial carbide, and large-scale nanoclusters having a size L 1〉550 Å. In most samples, large-scale nanoclusters can be regarded as objects with a fractal surface and a dimension 2〈D 1〈13, which also depends on the type of the initial carbide. Large-scale nanoclusters in npor-C obtained from Mo2C prove to be mass fractals with a dimension D 1〉2. Peculiarities of the structure formation of nanoporous carbon obtained from various carbides are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131336
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Structural study of nanoporous carbon produced from polycrystalline carbide materials: Small-angle x-ray scattering (1999)
    Springer
    Physics of the solid state 41 (1999), S. 1359-1363 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An x-ray small-angle scattering study is reported of the structure of nanoporous carbon prepared by chlorinating carbide compounds having different crystal structures (SiC, TiC, Mo2C). The measurements were carried out both in reflection and transmission. The angular dependences of the scattering intensity obtained are treated as a result of scattering from nanoparticles of different size. By unfolding the experimental curves into components corresponding to particles with different gyration radii R g, scatterer distribution functions in gyration radius m(R g) were found. It is shown that, irrespective of the type of the starting carbide, particles with R g∼5 Å make up the largest fraction in porous carbon. Samples prepared from different carbides differ in the degree of nanoparticle uniformity in size. The most uniform in size are nanoparticles in the samples prepared from SiC, in which the average value R g av 〈6 Å. Nanoparticles in the porous carbon produced from Mo2C are about twice larger.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130998
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering (1997)
    Springer
    Semiconductors 31 (1997), S. 1025-1029 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Raman and X-ray topographic measurements were carried out on epitaxial films of silicon carbide grown at Cree Research Inc. by vapor-phase epitaxy on bulk 6H-SiC substrates. The objective was to identify ranges of the Raman spectrum of 6H-SiC that were particularly sensitive to macrostructural defects (dislocations, inclusions, etc.) in these films, and to determine what conclusions could be drawn about the properties of the corresponding portions of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187018
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  • 5
    Electronic Resource
    Electronic Resource
    Intense photoluminescence of porous layers of SiC films grown on silicon substrates (1997)
    Springer
    Semiconductors 31 (1997), S. 354-358 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Luminescing porous layers have been prepared on SiC films grown on silicon substrates. The intensity of the photoluminescence increases very strongly as a result of electrolytic oxidation of porous layers. The spectrum of the pulsed photoluminescence consists of a series of overlapping bands from 1.8 to 3.3 eV. Investigations of the initial SiC films showed that they are nonstoichiometric and strongly disordered. Nonetheless, the intensity of the photoluminescence of the oxidized porous layers is much higher than can be obtained from correspondingly treated SiC crystals or crystalline films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187162
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    Paper (German National Licenses)
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