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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of mixed strain quantum well structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 390-393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization resolved photoluminescence from a cleaved sample edge (edge photoluminescence) is shown to be a useful tool for characterization of complex multiple quantum well InP based structures with wells of different strains. The polarization resolved luminescence resulting from the heavy- and light-hole transitions of In0.51Ga0.49As0.78P0.22 tensile and In0.9Ga0.1As0.52P0.48 compressive wells are found to match closely with theoretical values, validating assignments applied to the peaks obtained from photoluminescence. Strain distribution is shown to be an important effect when quantum wells of opposite strain are mixed together in the growth structure. The overlap of the transverse-electric (TE) and transverse-magnetic (TM) emissions found from edge photoluminescence on a mixed strain quantum well structure is shown to have an excellent match with the overlap of the TE and TM modes of a laser which uses the same structure in its active region. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364069
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  • 2
    Electronic Resource
    Electronic Resource
    Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3605-3609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spontaneous emission from an InGaAs/GaAs single-quantum well surrounded by AlAs/GaAs distributed Bragg reflectors (DBR) under the near-resonance condition between the exciton level and the confined optical mode is investigated. Under such conditions, on-axis spontaneous emission enhancement at the cavity resonant wavelength is clearly identified. The strength and character of the interaction of the exciton with the confined optical mode is determined by the dependence of photoluminescence spectra on the reflectivity of the DBR. Temperature dependence of the enhanced spontaneous emission shows the cavity resonant wavelength shifts at 0.85 A(ring)/°C around room temperature. An increase of emission intensity at the cavity resonant wavelength with increasing temperature is also observed, which can be related to the increase of the interaction between excitonic emission and cavity mode. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359936
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  • 3
    Electronic Resource
    Electronic Resource
    Phonon-assisted recombination in GaAs/AlGaAs multiple-quantum-well structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2538-2541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of GaAs/AlGaAs multiple-quantum-well structures with varying thicknesses have been studied as a function of excitation intensity and polarization. An intense sideband luminescence with a narrow linewidth is observed at 36 meV below the band-to-band transition in all samples. These results, along with additional investigations detailed in this paper, support the conclusion that for the samples studied in these experiments this emission is a stimulated phonon-assisted recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344244
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  • 4
    Electronic Resource
    Electronic Resource
    Nonlinear optical absorption in GaAs doping superlattices (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5206-5209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first direct nonlinear absorption measurements at energies below and above the band gap of GaAs doping superlattices are reported. Large period, lightly doped structures exhibit properties that are consistent with the Franz–Keldysh oscillations seen in bulk material. Very small period heavily doped structures show absorption features that reflect the quasi-two-dimensional nature of the conduction-band energy spectrum in such a system. The dependence on excitation of the nonlinear absorption in these systems is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342433
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  • 5
    Electronic Resource
    Electronic Resource
    Surface reactions in the atomic layer epitaxy of GaAs using monoethylarsine (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1762-1764 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of monoethylarsine (MEAs) as an arsine alternative source in GaAs atomic layer epitaxy (ALE) is studied. We use x-ray photoelectron spectroscopy and reflection high- energy electron diffraction (RHEED) to characterize the surface reactions of MEAs on GaAs(001) Ga-rich surfaces. At substrate temperatures between 320 and 540 °C, no carbon-related species are observed. At Ts=320 °C and an exposure of 100 L of MEAs, AsHx (x=1 or 2) is thought to be the adsorbed arsenic species. However, arsenic atoms are formed if a longer exposure time or a larger injection level is applied. As the substrate temperature increases As-rich surfaces are readily obtained with an improved RHEED 2×4 pattern. Two reaction steps are proposed. It is suggested that the reaction leading to AsHx species is the rate-limiting step. AsHx pairs react to form arsenic atoms by H2 release. Judging from the existence of intermediate AsHx species and the easier cleavage of As-ethyl bond, MEAs is believed to be a promising candidate as an arsenic source in GaAs ALE.〈lz〉 〈lz〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105083
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization and determination of the band-gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 601-603 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple quantum well samples have been grown by atmospheric pressure metalorganic chemical vapor deposition at In compositions from 9 to 28% and layer thicknesses ranging from 15 to 140 A(ring), depending upon the composition. Selected samples containing three quantum wells of a given composition but with different thicknesses were characterized by x-ray double-crystal diffractometry, low-temperature photoluminescence, and transmission electron microscopy (TEM). Using a simulation technique based on the dynamical theory of x-ray diffraction in concert with TEM measurements, the In composition in the quantum well as well as the thicknesses can be directly extracted. The peak positions of the photoluminescence are used to determine the strained and unstrained energy gap and the conduction band offsets associated with InxGa1−xAs of a given composition. We have found the discontinuities to be 60% of the difference in the energy gap of GaAs and strained InxGa1−xAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104570
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  • 7
    Electronic Resource
    Electronic Resource
    Reflectance-difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2261-2263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A real-time reflectance-difference spectroscopy (RDS) study of surface reactions of trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) with (001)GaAs surfaces in an ultrahigh vacuum environment is reported. These studies reveal several phases of atomic layer epitaxy of GaAs using TMGa. A model consistent with various kinetics studies is established to explain the distinct behavior observed in RDS during TMGa exposures. It is shown that optimal growth conditions can be achieved through RDS monitoring. The self-limiting mechanism which occurs in TMGa exposure cycle is believed to result from both selective adsorption and reaction of TMGa at As atoms and Ga vacancy induced Ga-rich surface reconstruction. It is also shown that TBAs is a promising arsenic source for atomic layer epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104916
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  • 8
    Electronic Resource
    Electronic Resource
    Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 695-697 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tertiarybutylarsine was used in the growth of GaAs and AlGaAs by metalorganic chemical vapor deposition over a range of compositions and V/III ratios. GaAs layers were obtained with both n- and p-type background carrier concentrations in the low 1014 cm−3 range. AlGaAs was grown at 20, 30, and 50% compositions, and photoluminescence of the Al0.2Ga0.8As indicates high quality material with full width half maximum (FWHM) values of the peaks being comparable to arsine-grown AlGaAs. High quality multiple Al0.3Ga0.7As/GaAs quantum wells of various widths produced photoluminescence spectra with FWHM values comparable to arsine-grown samples. Minority-carrier lifetimes as long as 400 ns were measured for a heterostructure of 0.5 μm GaAs with Al0.3Ga0.7As barrier layers. Graded index separate confinement heterostructure lasers were fabricated, and broad- area test results of these devices produced threshold current densities as low as 186 A/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103595
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  • 9
    Electronic Resource
    Electronic Resource
    Quantum well lasers with active region grown by laser-assisted atomic layer epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1437-1439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-assisted atomic layer epitaxy (LALE) is used to locally deposit device-quality material for the first time, as demonstrated by successfully fabricating broad-area lasers with a GaAs quantum well grown in this way. By hybridizing LALE with conventional metalorganic chemical vapor deposition epitaxy, heterostructures are grown which allow characterization of material quality by photoluminescence and capacitance-voltage measurements. In addition, graded-index separate-confinement heterostructure lasers with threshold current densities of 650 A/cm2 for 580-μm-long devices were made using the LALE quantum well deposit, while devices made away from the deposit did not lase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103363
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  • 10
    Electronic Resource
    Electronic Resource
    Optimization of stripe width for low-threshold operation of quantum well laser diodes (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2487-2489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimentally verified model for threshold current in GaAs/AlGaAs quantum well laser diodes has been extended to calculate for the first time the dependence of threshold current on stripe width. The lowest possible threshold is shown to occur when the lateral confinement factor is in the range of 55–60% for typical devices, a value that is not affected by mirror reflectivity or lateral index step. A simple, generalized optimization scheme for obtaining the unique width/length combination that results in lowest threshold is presented, and predicts potential as-cleaved threshold currents as low as 0.5 mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102887
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