Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 2001-2003
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Five comparative GaAs-based photoconductive detectors were fabricated to investigate the effects of AlGaAs window and buffer layers on device performance. Steady-state and transient photoconductive responses were measured on structures with and without an AlGaAs window layer over the photoconductive layer, and with and without an AlGaAs buffer layer between the photoconductive layer and substrate. The structure with both an AlGaAs window and AlGaAs buffer layer shows the lowest dark current (〈1 nA) and the highest responsivity (∼ 0.2 A/W). However, the structure on a bare semi-insulating GaAs substrate shows the fastest pulse response of ∼ 800 ps full width at half maximum, indicating that interfacial rather than bulk properties dominate the photoconductive characteristics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103990
Permalink
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
