Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Laser-induced etching of Si with chlorine (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2321-2326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photo-induced dry etching of silicon with chlorine is studied by measuring mass spectra and time-of-flight (TOF) distributions of the particles desorbed from a chlorinated target during irradiation with 308- and 248-nm photons. The detected masses are Si, SiCl, SiCl2, and SiCl3. The measured TOF spectra can be fitted with Maxwell–Boltzmann-like distributions. The temperatures obtained by these fits depend on laser power and chlorine pressure. A higher laser power or gas pressure results in a higher temperature. Activation energies for desorbing Cl, SiCl, and SiCl2 are obtained. Possible mechanisms to explain the results will be discussed. Etching of rough silicon is much more efficient than the etching of polished silicon. The maximum etch rate obtained is 30 A(ring) per laser pulse. No difference is found between p- and n-type silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337142
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A time-of-flight study of the neutral species produced by nanosecond laser etching of CuCl at 308 nm (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3746-3749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A time-of-flight (TOF) study of the particles leaving a CuCl target after irradiation by 15 ns laser pulses at 308 nm is performed. It is shown that the ejected species are Cl, Cu, CuCl, Cu2Cl, Cu2Cl2, and Cu3Cl3. The majority of the products consists of CuCl. The TOF spectra can be fitted by the sum of two contributions: a Maxwell–Boltzmann (MB) and a Gaussian-type (G) distribution. The MB distribution has a temperature of T=6000 K for all masses. The average energy and the standard deviation in the energy of the G contributions are typical for every individual product. The results strongly suggest that the MB contribution is due to a single photon-induced process, whereas the G contribution originates from a multiphoton and/or a multistep process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337585
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Mechanisms of sputtering of Si in a Cl2 environment by ions with energies down to 75 eV (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 315-322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtering of Si in a Cl2 environment by Ar+ and Xe+ ions with energies down to 75 eV has been investigated. Mass spectra and time-of-flight distributions of the sputtered species have been measured. Under 75-eV Ar+-ion bombardment of the Si target, SiCl, SiCl2, SiCl3, and/or SiCl4 are sputtered. When increasing the ion energy the SiCl4 contribution decreases in comparison with SiCl. This is caused by the fact that the newly formed Si-Cl compounds are sputtered at a high rate compared to the rate of SiCl4 formation. Time-of-flight distributions indicate that under 100-eV Ar+-ion bombardment the species are not sputtered by a collision-cascade mechanism. The spectra can be fitted by Maxwell–Boltzmann distributions at a high (〉2000 K) temperature. Increasing the Ar+-ion energy to approximately 250 eV the time-of-flight spectra of the sputtered species change from Maxwell–Boltzmann-like into spectra as expected for a collision-cascade mechanism. For low-energy Xe+ ion bombardment the sputtered species also show Maxwell–Boltzmann time-of-flight distributions. The change from Maxwell–Boltzmann to collision-cascade distributions occurs at higher ion energies than for Ar+-ion bombardment. The results obtained for low ion energies are discussed in terms of evaporation from an ion-induced hot spot.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341429
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Synthesis and sputtering of newly formed molecules by kiloelectron volt ions (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 4510-4512 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150664a014
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Emission of large hydrocarbons from frozen CH 4 by keV proton irradiation (1984)
    [s.l.] : Nature Publishing Group
    Nature 311 (1984), S. 39-40 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Frozen methane at 15 K was bombarded with 6-keV Hj ions and the sputtered flux was analysed by mass spectrometry. The frozen layer had a thickness of MO ?? (much larger than the range of the projectiles). The ion-beam flux was 50-100 ? cm"2. H J ions were chosen instead of H+ ions because of ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/311039a0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...