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  • 1
    Electronic Resource
    Electronic Resource
    Study of electrical damage in GaAs induced by SiCl4 reactive ion etching (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 221-224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the last decade reactive ion etching has become a very important tool for the patterning of submicron features. Although the particle energies involved in this etching process are relatively low, they still are high enough to alter the characteristics of semiconductor materials. In this paper we report on the electrical damage in n- and p-type GaAs induced by SiCl4 reactive ion etching. We found that the etching process causes significant electrical damage extending hundreds of nm deep in the p-GaAs but in n-GaAs only minor changes are observed. The changes in p-GaAs are thought to be due to the formation of EL2 point defects in a concentration comparable to the dopant concentration. Possible explanations for the observed differences in damage between p- and n-type material are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350314
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  • 2
    Electronic Resource
    Electronic Resource
    Crack formation and thermal stress relaxation of GaAs on Si growth by metalorganic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2187-2189 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report on the use of selective metalorganic vapor phase epitaxy growth as an original tool to alleviate the problem of random formation of microcracks in thick GaAs-on-Si heteroepitaxial layers. Through the use of a special mask design including the definition of sharp wedges in the SiO2 mask material, the thermally induced stress in the GaAs-on-Si layers preferentially relaxes at precisely located sites on the substrate. The influence of mask configuration, wedge shape, wedge orientation, and layer thickness on microcrack formation has been investigated. Results obtained show that small-area SiO2 wedges are useful for the definition of microcrack location, and thus eventually for optoelectronic device processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102056
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  • 3
    Electronic Resource
    Electronic Resource
    Growth behavior during nonplanar metalorganic vapor phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2284-2290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth behavior during nonplanar metalorganic vapor phase epitaxy on patterned GaAs substrates was investigated by using a periodic structure of GaAs/AlGaAs layers. At the channel edges, nongrowing and slow growing low-index planes were observed, indicating local kinetic limitation of growth. A number of different channel orientations were studied and a theoretical model was used to explain the resulting growth planes. The kinetic limitation is further demonstrated by the temperature dependence of the growth behavior and by the use of different profiles. The influence of misoriented substrates is discussed. A reduction of the growth velocity was observed in the channels as compared with the surrounding area.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341042
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  • 4
    Electronic Resource
    Electronic Resource
    High-reflectivity GaAs-AlGaAs mirrors: Sensitivity analysis with respect to epitaxial growth parameters (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 723-726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-reflectivity multilayer structures, consisting of a periodic stack of quarter-wavelength GaAs and AlGaAs layers, have been investigated concerning their optical behavior with respect to various deficiencies in the epitaxial growth process. Theoretical curves are compared with experimental ones from structures grown by metalorganic chemical vapor deposition. These layer structures are also shown to be useful in the characterization of thickness uniformity of an epitaxial growth process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339752
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  • 5
    Electronic Resource
    Electronic Resource
    Very low saturation densities in strained InGaAs/AlGaAs multiple quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 997-999 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The saturation of excitonic absorption in strained InGaAs/AlGaAs quantum wells is systematically measured as a function of strain. By comparison with an unstrained GaAs/AlGaAs quantum well sample a reduction by a factor of up to 9 in the saturation carrier density is observed in strained samples with indium concentrations of 10% and 15%. Very low saturation densities, as low as 0.82×1017 cm−3, are reported for the InGaAs/AlGaAs quantum wells with an indium concentration of 15%. The reduction in the saturation density is attributed to the change in the valence band density of states and the fact that these samples were designed to be fully strained. A novel method of measuring the absorption without antireflection coatings is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110930
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  • 6
    Electronic Resource
    Electronic Resource
    Comparative analysis of growth rate reductions on shadow masked substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3145-3147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth on shadow masked substrates by atmospheric pressure metalorganic vapor phase epitaxy is investigated. An analytical description based on simple concepts for a complex geometry shows good agreement with the experimental results and enables the determination of quantum well thickness variations in optical waveguide structures. The growth rate reduction (or: ratio of growth rates) r(u) in the middle of the channel increases as the width-to-height ratio of the mask opening is increased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105766
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  • 7
    Electronic Resource
    Electronic Resource
    Experimental study of an In0.53Ga0.47As–InP resonant plasma waveguide modulator for medium-infrared light (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2341-2343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first experimental study of a medium-infrared waveguide modulator based on the coupling between a dielectric grating coupler and an In0.53Ga0.47As–InP waveguide, operating near cut off, and containing a resonant semiconductor plasma. The prototype designed for demonstrating this novel effect was grown by metalorganic chemical vapor deposition. The experimental results show low power (225 mW), low voltage (15 V) operation for obtaining a modulation depth of 30%. The overall transmission efficiency is, however, rather low (0.5%) due to the wet chemical etching techniques used for defining the grating structure. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112739
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  • 8
    Electronic Resource
    Electronic Resource
    Carrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3327-3329 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strain, strain relief, and barrier design on the carrier lifetime in InGaAs/(Al)GaAs multiple-quantum-well samples is investigated. Carriers lifetimes are measured in samples with varying amount of strain, due to increasing indium concentration in the wells, as well as in samples subject to strain relief, with thick barriers and GaAs barriers. Lifetimes of the order of 0.5 ns are measured. The lifetime is sensitive to the presence of indium in the wells but remarkably insensitive to the indium concentration, the strain in the samples, and the barrier composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109060
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  • 9
    Electronic Resource
    Electronic Resource
    Normal incidence intersubband absorption in vertical quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 218-220 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: N-doped vertical AlGaAs quantum wells have been fabricated by metalorganic vapor phase epitaxial growth of a single-doped AlGaAs layer on a submicron grating. Intersubband absorption at normal incidence is demonstrated in those quantum wells. This opens new possibilities for infrared quantum well devices using intersubband transitions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113139
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  • 10
    Electronic Resource
    Electronic Resource
    Cathodoluminescence of single quantum wires and vertical quantum wells grown on a submicron grating (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 695-697 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present cathodoluminescence (CL) investigations of a corrugated GaAs/AlGaAs single quantum well (QW) structure grown on a submicron grating. The CL spectra have four distinct emission peaks. Using plan-view and cross-sectional CL imaging together with cross-sectional transmission electron microscope imaging, we have assigned the four peaks: They originate in the nominal QW, a quantum wire (QWR), a vertical quantum well (VQW), and the barrier, respectively. We have CL-imaged and -characterized single QWRs and VQWs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111037
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