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  • 1
    Electronic Resource
    Electronic Resource
    Depletion region effects in Mg-doped GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 770-775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deep nature of the Mg acceptor will have important implications for the performance of high-speed GaN-based bipolar devices. In this work, the effect of the deep acceptor on the band bending within the depletion region is examined in detail. The width of the transition region, which separates the mobile holes from the space-charge edge, is carefully investigated. High-frequency modulation of the depletion region is discussed for both the large- and small-signal cases. For the small-signal case, calculated results are compared to experimental measurements of frequency-dependent capacitance which have been performed on Mg-doped GaN samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371939
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  • 2
    Electronic Resource
    Electronic Resource
    High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3147-3149 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-aligned AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with high transconductances have been demonstrated on a sapphire substrate. Source and drain were selectively regrown with ∼1700 Å of n-GaN adjacent to the gate electrode. Source resistance was reduced to 0.95 Ω mm from 1.4 to 1.8 Ω mm with conventional GaN-based MODFETs. These self-aligned devices show a record high value of extrinsic transconductance ∼400 mS/mm for AlGaN/GaN MODFETs with a gate length of 1.2 μm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122701
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  • 3
    Electronic Resource
    Electronic Resource
    45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3131-3133 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An integrated widely tunable photonic receiver including a semiconductor optical preamplifier, a two-section grating-assisted co-directional coupler optical filter, and a waveguide photodetector has been produced in the InP/InGaAsP materials system. Although sidelobes and bandwidth are still higher than desired, this integrated receiver can be continuously tuned for a record-wide 45 nm wavelength range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116805
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  • 4
    Electronic Resource
    Electronic Resource
    Heavy doping effects in Mg-doped GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1832-1835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect measurements. Samples with a range of Mg-doping concentrations were prepared by metalorganic chemical vapor phase deposition. A number of phenomena are observed as the dopant density is increased to the high values typically used in device applications: the effective acceptor energy depth decreases from 190 to 112 meV, impurity conduction at low temperature becomes more prominent, the compensation ratio increases, and the valence band mobility drops sharply. The measured doping efficiency drops in samples with Mg concentration above 2×1020 cm−3. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372098
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  • 5
    Electronic Resource
    Electronic Resource
    Polarization-enhanced Mg doping of AlGaN/GaN superlattices (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2444-2446 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hole-transport properties of Mg-doped AlGaN/GaN superlattices are carefully examined. Variable-temperature Hall-effect measurements indicate that the use of such superlattices enhances the average hole concentration at a temperature of 120 K by over five orders of magnitude compared to a bulk GaN film (the enhancement at room temperature is a factor of 9). An unusual modulation-doping scheme, which has been realized using molecular-beam epitaxy, has yielded high-hole-mobility superlattices and conclusively demonstrated the pivotal role of piezoelectric and spontaneous polarization in determining the band structure of the superlattices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125042
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3681-3683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High p-type conductivity of Mg-doped AlGaN/GaN superlattices is demonstrated. The measured hole concentration at room temperature is over 2.5×1018 cm−3, more than ten times that obtained in bulk AlGaN layers, and lateral resistivity as low as 0.2 Ω cm is realized. The temperature dependence of the resistivity is drastically reduced compared to bulk films, providing evidence of the formation of a confined hole gas. Valence band bending due primarily to piezoelectric and spontaneous polarization is identified as the origin of these effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123220
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  • 7
    Electronic Resource
    Electronic Resource
    Low interface trap density for remote plasma deposited SiO2 on n-type GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1850-1852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor capacitors were prepared with remote plasma-enhanced chemical vapor deposition of SiO2 at ∼300 °C on an n-type GaN epitaxial layer grown by atmospheric pressure metalorganic chemical-vapor deposition on a sapphire substrate. No hysteresis was observed in the high-frequency capacitance-voltage (C−V) measurements, and the measured C−V curve agreed with the C−V behavior calculated for an ideal oxide with the same flat-band voltage as the measured C–V curve. The absence of hysteresis and stretchout in the measured C–V curve and the increase of capacitance with incident ultraviolet light while in deep depletion suggest a low concentration of interface traps. These results demonstrate previous predictions of the absence of Fermi-level stabilization at the interface for the ionic crystal GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116034
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 439-441 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron doped GaN layers were grown by metalorganic chemical vapor deposition (MOCVD) using ferrocene as the Fe precursor. Specular films with concentrations up to 1.7×1019 cm−3, as determined by secondary ion mass spectrometry, were grown. The Fe concentration in the film showed a linear dependence on the precursor partial pressure, and was insensitive to growth temperature, pressure, and ammonia partial pressure. Memory effects were observed, similar to Mg doping of GaN by MOCVD. The deep acceptor nature of Fe was used for growth of semi-insulating GaN films on sapphire substrates. A 2.6-μm-thick GaN film with a resistivity of 7×109 Ω/sq was attained when the first 0.3 μm of the film was Fe doped. X-ray diffraction rocking curves indicated high crystalline quality, very similar to an undoped film, showing that Fe doping did not affect the structural properties of the film. Fe doping allows for growth of semi-insulating GaN on sapphire without the high threading dislocation densities and/or high carbon levels that are normally necessary to achieve insulating films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490396
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  • 9
    Electronic Resource
    Electronic Resource
    Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2876-2878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts were fabricated for AlGaN/GaN high-electron-mobility transistors by selective-area mass transport regrowth of GaN. The contact resistance ranged from 0.23 to 1.26 Ω mm for different contact areas and geometries. The average resistivity of the autodoped regrown GaN was measured to 4×10−3 Ω cm. Devices with regrown contacts were fabricated, achieving a transconductance of 210 mS/mm. The technique provides a low-cost regrowth process, with applications in particular for high Al-composition AlGaN/GaN devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1369609
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  • 10
    Electronic Resource
    Electronic Resource
    Large near resonance third order nonlinearity in GaN (2000)
    Springer
    Optical and quantum electronics 32 (2000), S. 619-640 
    Details
    ISSN: 1572-817X
    Keywords: GaN ; nonlinear refractive index ; third-order nonlinearity ; two-photon absorption ; two-photon confocal microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We have studied third order nonlinearities, including two-photon absorption coefficient β and nonlinear refractive index n 2, of GaN in below bandgap ultraviolet (UV) wavelength regime by using UV femtosecond pulses. Two-photon absorption was investigated by demonstrating femtosecond UV pulsewidth autocorrelation in a GaN thin film while femtosecond Z-scan measurements revealed information for both n 2 and β. The distribution of n 2 versus wavelength was found to be consistent with a model described by the quadratic Stark effect, which is the dominant factor contributed to the nonlinear refractive index near the bandgap. Large β on the order of 10 cm/GW and large negative n 2 with a magnitude on the order of several 10−12 cm2/W were obtained. The β at near mid-gap infrared (IR) wavelength was also found to be on the order of several cm/GW by using two-photon-type autocorrelations in a GaN thin film. Taking advantage of the large two-photon absorption at mid-gap wavelengths, we have demonstrated excellent image quality on two-photon confocal microscopy, including two-photon-scanning-photoluminescence imaging and two-photon optical-beam-induced current microscopy, on a GaN Hall measurement sample and an InGaN green light emitting diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007076506723
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