Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 187-189
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The transport of minority electrons in silicon has been investigated using an ensemble Monte Carlo approach at room temperature with electron-hole scattering rates which take into account the ellipsoidal nature of the conduction band valleys. Mobility calculations showed quantitative agreement with experimental values at an acceptor concentration of 4.5×1016 cm−3 while qualitative agreement with the electron-hole drag effect was observed at 3.8×1018 cm−3. Transient calculations showed the electron-hole interactions decrease electron energy, reduce steady-state velocity, and decrease the transfer rate of electrons to the cold valleys.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109334
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