ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Modulation doped GaAs quantum wires are prepared by molecular beam epitaxy regrowth on patterned AlGaAs buffer layers. The structural properties are investigated by scanning electron microscopy and by transmission electron microscopy. Far-infrared spectroscopy provides information about the lateral confinement and the carrier density in the quantum wires. The measurements indicate a distinct dependence of the electronic width on the orientation of the quantum wires within the (100) plane. Confinement energies of 6.9, 9.3, and 11.7 meV are determined for the [011], [001], and the [01¯1] wire orientations, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109833
Permalink