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  • 1
    Electronic Resource
    Electronic Resource
    Improved Foucault imaging of magnetic domains with a modified 400 kV transmission electron microscope (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 1038-1043 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Modifications have been made to a 400 kV side-entry transmission electron microscope fitted with a low-field objective pole piece, in order to position apertures close to the back focal plane of the objective lens, as there is no direct access to the required position in the column. The modifications have facilitated developments in the imaging of magnetic domain structure in magnetic materials using the Foucault technique, for which the correct positioning of the objective aperture is crucial. All usual transmission electron microscopy facilities are retained, allowing a full range of specimen holders and imaging modes to be used along with TV recording and electron energy loss spectroscopy. Some initial results are presented from Fe/Cr and Co/Pt multilayer films, for which the Lorentz deflection angle is very small, and for which the Fresnel imaging mode is of limited use as the grain structure contrast masks the magnetic contrast. Initial results are also presented from NdFeB permanent magnet material for which the use of a high electron accelerating voltage is necessary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144174
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  • 2
    Electronic Resource
    Electronic Resource
    In situ studies of the crystallization kinetics in Sb–Ge films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 607-613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization process in SbxGe1−x alloy films has been observed during in situ annealing in a transmission electron microscope. Results are presented for two films with x=0.89 (89 at. % Sb) and x=0.71 (71 at. % Sb), which lie on either side of the eutectic composition (x=0.85). In the former films radial crystals are observed to grow rapidly from discrete nuclei, whereas in the latter films the crystallization process occurs through a near-planar front. In addition, quantitative data obtained from these experiments show that the Sb0.89Ge0.11 films have a higher activation energy for crystal growth and a lower temperature for the nucleation of crystals. Significant differences are observed between the crystallization processes for the two films studied, with the Sb0.89Ge0.11 film showing better potential for development as an ultrafast optical phase-change storage medium. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359045
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  • 3
    Electronic Resource
    Electronic Resource
    Lorentz transmission electron microscopy on NiFe/Cu/Co/NiFe/MnNi active spin valve elements (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2032-2034 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ magnetoresistance measurements on lithographically defined spin-valve elements were performed by means of Lorentz transmission electron microscopy. The observation of a magnetic domain structure and the simultaneous magnetoresistance measurement by applying controlled field and controlled current have led to a clear correlation between giant magnetoresistance and changes in the magnetic domain structure. A study of the spin-valve behavior with the increase of the applied current value is also shown. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119778
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced resistance to metal induced crystallization of amorphous Ge in contact with Bi (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2039-2041 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metal-induced crystallization (MIC) of amorphous Ge (α-Ge) has been studied in two different Bi/α-Ge bilayer film systems prepared by dc sputtering: films with nm-size columnar Bi grains and films with micron-size laminar Bi grains produced by pulsed laser irradiation. Both systems were annealed in situ in a transmission electron microscope in order to determine the temperature at which the semiconductor crystallizes as a function of the metal grain size and the mechanism by which crystallization occurs. The results show that increasing the gram size by two orders of magnitude leads to an increase in the Ge crystallization temperature above the eutectic temperature of the Ge–Bi system and, thus, to a system with an enhanced resistance to MIC. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116872
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  • 5
    Electronic Resource
    Electronic Resource
    The role of size effects on the crystallization of amorphous Ge in contact with Bi nanocrystals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5283-5290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of metal-induced crystallization of amorphous Ge in contact with Bi nanocrystals (NCs) have been studied by in situ transmission electron microscope annealing. Series of nanostructured films consisting of layers of Bi NCs in an amorphous Ge matrix have been grown by pulsed laser deposition. The a-Ge crystallization temperature depends strongly on both the size and shape of the NCs and the separation between the NCs in the film-normal direction. The size of the NCs controls the crystal nucleation process through the amount of metal surface in contact with the semiconductor, the shape of the NCs determines the initial Ge crystallization in the direction perpendicular to the film plane, and the separation between the NCs in the film-normal direction controls the overall pattern of the Ge crystal growth process. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368777
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  • 6
    Electronic Resource
    Electronic Resource
    Crystallization of the Supercooled Liquid Zr〈sub〉41〈/sub〉Ti〈sub〉14〈/sub〉Cu〈sub〉12.5〈/sub〉Ni〈sub〉10〈/sub〉Be〈sub〉22.5〈/sub〉 (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 269-272 (Jan. 1998), p. 773-778 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.269-272.773.pdf
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