Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 1149-1154
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The changes in the mechanical and structural properties of sputter-deposited iridium films are described as a function of annealing temperature from 673 to 1073 K. Glancing angle x-ray diffraction and x-ray reflectivity measurements indicated the growth of an IrO2 overlayer by annealing at 873 K. An increased annealing temperature of 1073 K led to the oxidation of the underlying iridium layer yielding a film comprising IrO2 (major) and Ir (minor) phases. Annealing the films at 873 and 1073 K also led to an increased surface roughness of the films. As-deposited as well as films annealed at 673 and 873 K exhibited tensile stresses along the normal to the plane in consideration. Annealing at 673 K and cooling within a tube furnace relaxed normal and shear stress present in as-deposited 20 nm Ir metal films. Slow cooling, formation of oxygen–iridium bonding, and increased roughness caused the preferential relaxation of the shear stresses for the film annealed at 873 K. The oscillations observed in the strain-sin2 ψ curve for the films annealed at 1073 K could be due to texture in the film and/or stress gradient across the thickness of the film. The residual stress has, therefore, not been evaluated for these films. X-ray photoelectron spectroscopic measurements on the iridium film annealed at 1073 K show that the film is oxygen rich at the surface and oxygen deficient near the substrate. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1429798
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