Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxy growth of CdTe on InSb (110) monitored in situ by Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4060-4065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe epitaxial layers were deposited on clean cleaved InSb(110) substrates by molecular-beam epitaxy at room temperature and elevated temperatures. The formation of interface and layer was investigated using Raman spectroscopy as a growth monitor, i.e., Raman spectra were taken on line without interruption of the deposition process. Fabry–Pérot interference of the incident as well as the scattered light within the heterostructure leads to a characteristic modulation of the substrate phonon scattering intensity. The modulation is calculated and serves as a measure for the layer thickness. For the deposition at elevated temperatures the true surface temperature is determined from the InSb TO phonon frequency shift. While at a substrate temperature of 150 °C the crystalline quality of the CdTe layer was improved compared to room-temperature growth, the deposition of CdTe at 300 °C resulted in the formation of a layer consisting of In2Te3 and liberated Sb. The effect of the laser radiation on the growth process at different temperatures is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359862
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Raman monitoring of semiconductor growth (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7330-7333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper it is demonstrated that Raman spectroscopy can be used for in situ online monitoring of semiconductor layer growth. For this purpose an ultra-high-vacuum chamber was designed to suit molecular beam epitaxial growth as well as simultaneous optical measurements utilizing a multichannel detection Raman system. As a result Raman spectra can be taken while growth progresses. As shown by the example of InSb growth, they provide information on the interface chemistry, crystal quality of the growing layer, and the growth mode as well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356644
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Identification of deep levels in liquid-encapsulation Czochralski-grown Fe- and Zn-doped InP: A proof of the nonexistence of a Fe4+/Fe3+ donor level (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 226-232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in liquid-encapsulation Czochralski (LEC) grown p-type InP:Fe codoped with Zn have been investigated by means of temperature-dependent Hall-effect (TDH), deep-level transient spectroscopy (DLTS), calorimetric absorption spectroscopy, and electron spin resonance measurements. Although a dominant deep hole trap is revealed both by DLTS and TDH measurements in the vicinity of the valence band edge at EV+0.2 eV, the spectroscopic analysis unambiguously invalidates previous speculations on the existence of a second energy level of the isolated iron impurity in the band gap of InP, i.e., a Fe4+/Fe3+ donor level. From the axial concentration profile and a comparison with a LEC-grown p-type InP crystal doped with Zn only it seems that the trap is not even iron-related in contrast to tentative assignments often found in the literature. Native or Zn-related defects which depend on the particular growth conditions used are assumed to account for this level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353894
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The phototransformation of C60 thin films on GaAs(100) studied by in situ Raman spectroscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1340-1345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra in the region of the pentagonal pinch mode Ag(2) of C60 were taken in situ during the deposition of C60 on the GaAs(100) surface at different temperatures. For very low coverages, only the feature corresponding to the pentagonal pinch mode of pristine C60 is visible. The onset of polymerization under laser irradiation occurred at thicknesses of about 15 nm which is attributed to a suppressive effect on the polymerization process due to the interaction of C60 with the substrate surface. The line shape for the feature due to photopolymerized C60 was different at each temperature indicating distinct polymeric states at different temperatures. These different states are discussed in comparison to recent theoretical calculations. Additionally, the photopolymerization due to irradiation after growth was investigated in situ. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368203
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Identification of ultra-thin layers by cross-sectional Raman spectroscopy (1997)
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 32-35 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract  Micro-Raman spectroscopy measurements in a cross-sectional sample geometry were performed for three heterosystems (3C-SiC/Si(100), diamond/Si(100), and ZnSxSe1-x/GaAs(100)). Using an automated xy-stage with a minimum step width of 100 nm one-dimensional scans across the interface were taken. It is demonstrated that sufficient sensitivity for the detection of ultra-thin layers with thicknesses in the nanometer range can be achieved. Thus surface and interface layers not accessible in a plane-view geometry can be identified. In addition, the depth-resolved variation of sample properties like interfacial reactions, stress, and stoichiometry will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050339
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Two cystic fibrosis patients with the genotype G542X/G551D (1993)
    Springer
    Human genetics 〈Berlin〉 91 (1993), S. 78-79 
    Details
    ISSN: 1432-1203
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Two adult sisters affected by cystic fibrosis were both shown to carry two different alterations within exon 11 of the CFTR gene, the nonsense mutation G542X and the missense mutation G551D. Both patients exhibit a relatively benign clinical course. In the described patients, G542X functions as a “mild” allele and is, in this respect, dominant to the “severe” G551D.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00230228
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Recurrent septicemias withEnterococcus faecium (1997)
    Springer
    Infection 25 (1997), S. 127-128 
    Details
    ISSN: 1439-0973
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary A 17-year-old male patient with extrahepatic biliary atresia underwent an orthotopic liver transplantation in September 1994. In blood cultures drawn in November and (6 weeks later) December 1994, from bile secretions in May 1995, stool in June 1995 an wound abscess in August 1995, ampicillin-resistantEnterococcus faecium was isolated. Pulsed-field gel electrophoresis demonstrated the clonal identity of the isolates. To our knowledge, repeated infections with the sameE. faecium strain over a period of 9 months have not been described before. As multiple-resistant enterococci may colonize and reinfect liver transplant recipients for such a long time, preoperative antibiotic therapy should be administered cautiously in order not to select these organisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02113593
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...