Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of N+-implanted silicon on insulator by energy-filtered imaging (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1850-1852 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349503
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Observation of carrier concentration saturation effect in n-type AlxGa1−xAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1391-1393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a series of Al0.3Ga0.7As epitaxial layers with Si doping concentrations varied from 1×1017 to 1.5×1018 cm−3, carrier concentration saturation effect was observed by Hall measurements. When Si doping concentration was increased, the carrier concentration tended to saturate. This is due to the negative U property of the donor DX center. The Fermi energy tends to be pinned at the free energy level of the DX center. This carrier concentration saturation effect should not be limit to only n-AlxGa1−xAs semiconductors. It is a general effect in n-type compound semiconductors when donor impurities induce negative U DX levels, and will have a great influence in designing optoelectronic and fast speed microelectronic devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113211
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2849-2851 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations and traps in p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by cross-section transmission electron microscopy (XTEM) and deep level transient spectroscopy (DLTS). The misfit dislocations and threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thicknesses over all satisfy the Dodson–Tsao plastic flow critical layer thickness curve. By comparing the XTEM and DLTS results, we identify that the threading dislocations in bulk layers introduce three hole trap levels H1, H2, and H5 with DLTS activation energies of 0.32, 0.40, and 0.88 eV, respectively, and one electron trap level E1 with a DLTS activation energy of 0.54 eV. The misfit dislocations in the relaxed InGaAs/GaAs interface induce a hole trap level H4 with a DLTS activation energy of 0.67–0.73 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117339
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Cross-sectional transmission electron microscopy of silicon LSI circuits and josephson junction devices (1987)
    New York, NY : Wiley-Blackwell
    Journal of Electron Microscopy Technique 7 (1987), S. 319-322 
    Details
    ISSN: 0741-0581
    Keywords: Cross-sectional transmission electron microscopy (XTEM) ; LSI circuit ; Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Natural Sciences in General
    Notes: Cross-sectional transmission electron microscopy (XTEM) has been used to diagnose silicon LSI circuits and Josephson junction devices. For LSI circuits, some typical failure problems have been presented. For Nb-Si-Nb Josephson junction, microholes in the thin silicon layer have observed, and they are responsible for the short circuiting of these devices.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jemt.1060070411
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...