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  • 1
    Electronic Resource
    Electronic Resource
    The effects of microcrystalline structure on the photoluminescence of porous silicon-on-sapphire (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6012-6013 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-on-sapphire was fabricated in as-deposited, improved, and bonded wafer forms. Each of the fabrication techniques imparts characteristic microcrystalline defects in the silicon layer. Microstructural defects such as microtwins and threading dislocations in the starting material have no observed effect on the light emitting properties of porous silicon-on-sapphire. Vacancies imparted by ion implantation damage, however, can amorphize the material resulting in a quenching of the photoluminescence (PL). An apparent increase in the density of light emitting structures leading to enhanced PL can also be obtained by limited ion damage of the material prior to the fabrication of the porous layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358353
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescent thin-film porous silicon on sapphire (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1694-1696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results from the chemical stain etch fabrication and analysis of thin-film photoluminescent porous silicon on sapphire substrates are presented. The transparent sapphire substrate allows the excitation and collection of the luminescence at either the front or back of the wafer. Morphological differences found using scanning electron microscopy between porous SOS and porous bulk silicon are attributed to preferential etching of threading dislocations. This is confirmed by an observed stress relaxation in the Raman spectra. Also, it is shown for the first time that photoluminescent porous silicon (n-type) can be produced by photoinitiation of the chemical stain etch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109641
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    Paper (German National Licenses)
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