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  • 1
    Electronic Resource
    Electronic Resource
    Oxygen contamination of low temperature ultrahigh vacuum-deposited Ge films on GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 556-558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Fourier transform infrared absorption spectrum for the range of 500–4000 cm−1 wave numbers was measured for several Ge films deposited on GaAs using ultrahigh vacuum e-beam deposition at various substrate temperatures ranging from room temperature (RT) to 500 °C. Spectra indicate oxygen incorporation at low deposition temperatures whether or not the native oxide was removed from the substrate prior to film deposition. Using transmission electron microscopy, we show that Ge films deposited at RT and 100 °C on a (100) GaAs surface that did not have the oxides removed are amorphous while those deposited at 100 °C with the oxide removed are crystalline, but are highly defective. Secondary ion mass spectroscopy (SIMS) measurements show that the amorphous films at RT contain more than two orders of magnitude more oxygen than the films deposited at 100 °C or a single crystal film deposited at 400 °C. Oxygen-18 diffusion studies definitively show that the excess oxygen in the amorphous films percolates in from the atmosphere. SIMS studies further reveal that thermally removing the GaAs substrate surface oxide or depositing an Au film on top of the Ge film has little effect on the incorporation of oxygen. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117785
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  • 2
    Electronic Resource
    Electronic Resource
    Thin Film YBCO Pixels for MMW Detector (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 54 (Sept. 2008), p. 434-438 
    Details
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: This research addresses the fabrication of crack-free 40-nm thin film YBa2Cu3O7 (YBCO) pixelstructures based on high temperature superconductor (HTSC) microbolometers for highly sensitivethermal detectors that can be miniaturized for affordable passive millimeter-wave (MMW) imaging.A completely dry etch process is described for suspended transition edge bolometers by removing(releasing) the silicon substrate underneath a 3 micrometer wide pixel using gaseous plasmasulfurhexafluoride (SF6) chemical reaction. This is an improvement over conventional selective wetchemical etching techniques that are both harsh on the YBCO and require additional complexalignment steps to the substrate material leading to very poor device yields and performance. Issuesrelating to material roughness, etch redeposition, and silicon undercutting will be analyzed andmethodologies to overcome/minimize such problems will be explained in detail
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.54.434.pdf
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    MEMS Rotational Actuator for High Force and Large Displacement (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 54 (Sept. 2008), p. 372-377 
    Details
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: A MEMS thermal actuator that provides rotational or near-linear translationaldisplacements is investigated. This actuator provides a solution to applications that require highforcesand large displacements. Output moments up to 7x10-7 N-m and free rotations of up to 3degrees were measured. These correspond to forces of up to 1.44mN at a displacement of 23.7μm,yielding a work of 3.41x10-8 N-m. An electrothermal-mechanical model that considers temperaturedependence of material properties is presented, and the model predictions show good agreementwith actuator test data
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.54.372.pdf
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    Paper (German National Licenses)
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