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  • 1
    Electronic Resource
    Electronic Resource
    Kinetic aspects of epitaxial silicon growth using disilane in a rapid thermal processing system (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4885-4887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the epitaxial growth rate of Si in the disilane/hydrogen system for different experimental conditions in a rapid thermal processing–low-pressure chemical vapor deposition reactor. The measured activation energy is about 43 kcal/mol for temperatures below 700 °C. The growth rate dependence on disilane or hydrogen partial pressures is measured in order to verify the reliability of a proposed model for the decomposition of the disilane molecule in the torr pressure regime. The obtained crystal quality is comparable to that obtained with silane gas except for higher growth rate in the disilane system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346121
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  • 2
    Electronic Resource
    Electronic Resource
    Nondestructive characterization of silicon-on-insulator structures using infrared spectroscopic ellipsometry (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5810-5813 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nondestructive characterization of a large variety of silicon-on-insulator structures has been performed by infrared spectroscopic ellipsometry (IRSE). This technique is shown to be applicable over very wide ranges of Si and SiO2 thicknesses and thus is more adapted than visible reflectometry or spectroscopic ellipsometry when relatively thick films are analyzed. In addition, IRSE provides information on any possible interface roughness and thickness homogeneity of the layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346952
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical characterization of silicon epitaxial layers grown by limited reaction processing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 358-361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitance-voltage technique is used to perform a comparison between various silicon epitaxial layer structures grown by the limited reaction process using silane, disilane, or dichlorosilane, diluted in hydrogen. Accurate analysis of the apparent doping profiles allows the determination of the relevant physical parameters, i.e., the residual doping level and the density of trapped charges at the interfaces between the layers. From the electrical point of view the best result is obtained for growth with disilane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347721
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Si heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4039-4045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature and thermal treatments on the luminescence properties of SiGe/Si heterostructures grown by rapid thermal chemical-vapor deposition is reported. While the excitonic luminescence of the strained Si1−xGex layer is observed in the samples grown above 700 °C, the signal completely disappears for deposition temperatures lower than 650 °C. After rapid thermal annealing, we show that a drastic improvement of the luminescence efficiency of the layers deposited at low temperatures is obtained. A spectral blue shift of the excitonic luminescence can also be observed and is interpreted in terms of interdiffusion of Si and Ge atoms during the heating process. The photoluminescence spectra after a rapid thermal annealing at 1050 °C have been used for the first time to perform an accurate study of the thermal stability of strained Si0.85Ge0.15 alloys. It is shown that when the layers are in a metastable state before annealing, the relaxation phenomenon leads to a photoluminescence signal which consists of both band-edge and dislocation-related recombinations. In this case, the strain relaxation is mainly attributed to the formation of misfit dislocations at the SiGe/Si heterointerface. In very thin SiGe layers, only the band-edge luminescence can be observed, but it is shifted to the high-energy side as expected by the interdiffusion model. Using a simple theoretical approach, this shift can be used to calculate the interdiffusion coefficient in good agreement with the literature data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359860
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  • 5
    Electronic Resource
    Electronic Resource
    Maximum supercooling of silicon encapsulated in SiO2 (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1977-1980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An SiO2-encapsulated silicon-on-silica structure has been used to examine quantitatively the supercooling of Si. Fully melted, isolated Si islands generally exhibit a maximum supercooling of 235 °C, i.e., their freezing occurs at a temperature around 1175 °C. The implications of this behavior for the growth of thin Si films on amorphous substrates via zone melting are presented and briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336376
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  • 6
    Electronic Resource
    Electronic Resource
    Study of the solidification front of Si films in lamp zone melting controlled by patterning the underlying SiO2 (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 632-635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A periodic heat-sink structure has been tested in lamp recrystallization of thin polycrystalline silicon films deposited on oxidized wafers. The defects generally encountered in this type of recrystallization, grain and subgrain boundaries, are localized in specifically designed areas. This localization technique and especially the occurrence of unlocalized defects are interpreted taking into account the breakdown of the solidification front. Beside faceting effects, constitutional supercooling due to impurity segregation is found to play a major role in this type of recrystallization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336623
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  • 7
    Electronic Resource
    Electronic Resource
    Schottky barrier heights of W on Si1−xGex alloys (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2520-2522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Schottky barrier height of W on p-type Si1−xGex/Si has been investigated as a function of composition (10%≤x≤33%) and Si1−xGex thickness for a given composition. The barrier height decreases with increasing Ge fraction and follows the rate of strain relaxation. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110468
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  • 8
    Electronic Resource
    Electronic Resource
    Band-gap narrowing determination by photoluminescence on strained B-doped Si0.82Ge0.18 layers grown on Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2986-2988 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work reports on photoluminescence (PL) characterization of heavy boron-doped SiGe(p+)/Si(p) heterostructures and Si(p+)/Si(p) pseudoheterostructures grown by rapid thermal chemical vapor deposition. For the pseudoheterostructures, the band-gap narrowing is measured in the 4×1018–1.5×1019 cm−3 doping level range in very good agreement with bulk silicon results. The band-gap narrowing of SiGe strained layers has been determined for the first time, by means of PL measurements on boron-doped Si0.82Ge0.18 strained alloy up to 4×1019 cm−3. The reduced band gap of the Si0.82Ge0.18 alloy is deduced, taking into account both strain and heavy doping effects and compared to band-gap narrowing found in Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109165
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanics of the silica cap during zone melting of Si films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1388-1391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zone melting recrystallization of polycrystalline silicon films on oxidized wafers, performed using linear strip heaters, is an easy way of obtaining good quality silicon-on-insulator films. After recrystallization, the top silicon surface has undulations which are very detrimental when applications in very-large-scale integration circuits are being considered. In this paper, which is the first quantitative study of this mass transport, the silica viscosity derived from experiments at 1685 K has been estimated at 2–3.4×108 decapoises, and the silicon undulations are found to vary as the inverse of the cap thickness. We therefore demonstrate that the mechanical resistance of the silica cap is the mechanism which limits the silicon mass transport during zone melting, and his cap behavior is in good agreement with the classical properties of silica at 1685 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344441
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical and piezoresistive properties of boron-implanted ZMR-SOI films
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 36 (1993), S. 241-245 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(93)80199-Q
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