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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2158-2160 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of large-area (20 cm2) diamond deposition from a scaled-up stagnation-flow reactor. The reactor uses a unique nozzle geometry that optimizes reagent gas usage. The premixed acetylene–oxygen–hydrogen flames were operated in a highly strained configuration, allowing uniform deposition of diamond with growth rates exceeding 25 μm/h. Substrate temperature control and flame stability of the chemical vapor deposition reactor are described. Diamond films were deposited on a molybdenum substrate with a surface temperature of approximately 1200 K and C/O ratio of 1.03. Diamond film growth results are presented, and film uniformity is assessed using micro-Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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