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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1121-1130 
    ISSN: 0392-6737
    Keywords: Conductivity of specific semiconductors and insulators ; Amorphous and glassy semiconductors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Thick layers of GeTeSe chalcogenide glass have been prepared and subjected to conduction measurements under the effect of both temperature and pressure. The results of theI–V characteristics exhibit transition from high-resistance state to differential negative resistance state through a turnover point. The application of uniaxial pressure shows the similar effect of temperature on that behaviour. Both current and voltage at the turnover point depend on pressure and ambient temperature. The rise of temperature in the conduction path due to joule heating and application of uniaxial pressure as well as the reduction in the energy gap width (β=2.87·10−12eV/N m−2) are estimated and discussed at the turnover point. This behaviour is explained according to the orientation of dipoles randomly dispersed in viscous amorphous matrix.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 963-974 
    ISSN: 0392-6737
    Keywords: Conductivity of specific materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Glass layers of (V2O5)1−x (P2O5) x were prepared by melting appropriate mixtures of V2O5 and P2O5 powders. The measurements ofI–V characteristic curves show three regions of conduction, namely high-resistance state, turnover point with zero-differential resistance region (∂V/∂I=0) and differential negative-resistance region. The turnover point is strongly dependent on composition, sample thickness and temperature. It is found that the increase of the ratio of phosphorus/vanadium reduces conductance as well as it raises the field required to produce turnover behaviour. The data in the range up to the turnover point are discussed on the basis of an electrothermal process. Results of the negative-resistance state could be explained in terms of a hopping mechanism.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 39 (1990), S. 1903-1913 
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A heat-resistant rubber blend of natural rubber NR and styrene butadiene rubber (SBR-1502) was prepared according to the standard techniques. The rubber blend was loaded with different concentrations of LAMP black and general purpose furnace (GPF) black for obtaining conductive rubber composites. The obtained vulcanizates were subjected to electrical conductivity measurements over a wide range of temperature and electric field. It was found that all samples showed negative values of temperature coefficient of conductivity (TCC). The temperature developed inside the samples by the Joule heating effect was recorded as a function of time (T-t) at different values of the initial applied DC-electric power. The T-t dependence was found to obey an exponentially growing function with a time constant (τ), which was found to be dependent on the concentrations as well as the type of carbon black and the value of the initial applied power. The current-voltage characteristics of the samples showed a negative resistance behavior after a characteristic voltage (V*). It was noticed that V* decreases as the carbon black concentration increases.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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