Electronic Resource
[S.l.]
:
International Union of Crystallography (IUCr)
Acta crystallographica
45 (1989), S. 577-580
ISSN:
1600-5724
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Chemistry and Pharmacology
,
Geosciences
,
Physics
Notes:
The double-crystal rocking curve of the Si 222 reflection was obtained by a high-resolution technique. The angular half-width of the rocking curve was measured using Mo Kα radiation on a floating-zone-grown silicon single crystal and found equal to 0.07", this value being close to that calculated from the known structure factor of the Si 222 reflection. A refined value for the structure factor was 1.47 (2). For a Czochralski-grown Si single crystal with oxygen concentration .̃1018 atoms cm-3, the angular half-width is higher by a factor of 2.5. The rocking-curve broadening is explained by the presence of oxygen in the silicon lattice.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0108767389003879
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |