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  • 1
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 24 (1991), S. 403-404 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The spatial intensity profile of an X-ray beam reflected by a crystal with microdefects in the Bragg case is considered. A practically pure diffuse component was measured at the tail of the intensity distribution. From these data, static Debye–Waller factors of nearly perfect silicon crystals were obtained.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 37 (1981), S. 769-774 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Silicon-crystal rocking curves are measured with a high angular resolution (0̃.1′′) under conditions of the Borrmann effect resonant suppression by transverse ultrasonic vibrations. It is shown that on the curves deep minima appear whose positions depend on the vibrational frequency, in agreement with the theory.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 45 (1989), S. 577-580 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The double-crystal rocking curve of the Si 222 reflection was obtained by a high-resolution technique. The angular half-width of the rocking curve was measured using Mo Kα radiation on a floating-zone-grown silicon single crystal and found equal to 0.07", this value being close to that calculated from the known structure factor of the Si 222 reflection. A refined value for the structure factor was 1.47 (2). For a Czochralski-grown Si single crystal with oxygen concentration .̃1018 atoms cm-3, the angular half-width is higher by a factor of 2.5. The rocking-curve broadening is explained by the presence of oxygen in the silicon lattice.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 23 (1990), S. 355-358 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Bragg and diffuse scattering contributions to a reflection can be separated using the intensity dependence on the amplitude of transverse ultrasound excited in the crystal. The method is based on the fact that a weak ultrasound with wavelength equal to the extinction length suppresses almost completely the anomalous transmission of the coherent (Bragg) beam in a sufficiently thick absorbing crystal and does not affect diffuse scattering. Both parameters characterizing diffraction in a slightly imperfect crystal, the static Debye–Waller factor and the coefficient of additional absorption due to diffuse scattering, have been determined for a silicon crystal containing oxide precipitates after heat treatment.
    Type of Medium: Electronic Resource
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