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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2097-2104 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A special stress relaxation effect in thin aluminum films evaporated onto oxidized silicon wafers is reported. The effect is observed at elevated temperature and under tensional stress. It appears as if certain Al grains in the film surface suddenly "collapse'' compared to surrounding grains. The phenomenon is observed during the cooling phase of an annealing cycle, or when imposing external strain on the film by bending of the substrate at elevated temperature. Such external strain was imposed by micromechanical technique in situ in a scanning electron microscopy (SEM), and the collapse phenomenon was monitored as it happened. The phenomenon occurred instantaneously and only in films of thickness 1 μm or more; thinner films relaxed by hole formation. The grain collapse effect is characterized, and a physical explanation is given, supported by SEM and transmission electron microscopy (TEM) investigations and surface profile measurements.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5840-5844 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to test the statistical influence of some process and micromachining parameters on the fracture strength of silicon microelements, arrays of identical microsized cantilever beams were bulk micromachined in single-crystalline silicon wafers. The beams were exposed to various surface treatments (diamond polishing with different grades, oxidization, stripping of oxide) in different combinations. The influence on fracture strength was investigated by bending the beams to fracture in a micromanipulator mounted in situ in a scanning electron microscope while registering force-versus-deflection curves. Average fracture strengths, standard deviations, Weibull moduli, crack-initiating flaw sizes, and in some cases elastic moduli were evaluated. Diamond polishing was found to decrease the fracture strength drastically, but polishing followed by oxidization not only restored the original strength, but actually increased it, due to crack healing. Polishing, oxidization, and subsequent stripping of oxide resulted in fracture strengths slightly higher than the original strength. The Weibull modulus was diminished from 10 to 6–9 by the polishing. The initiating flaw sizes were theoretically evaluated, and found to agree with previous results of cross-sectional transmission electron microscopy studies of polished silicon surfaces. The elastic moduli determined were significantly lower (30%–40%) than the corresponding module of pure, single-crystalline silicon, probably due to high dopant contents in the specimens investigated here.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 122-128 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microscale silicon cantilever beams of (100)〈100〉 and (100)〈110〉 orientations were magnetron sputtered with submicron layers of Al, Ti, or TiN, or thermally coated with SiO2. Theoretical expressions for the elastic deflection induced by residual stresses were derived, and utilized to deduce such stresses from observed deflections. A theory for the elastic stress distribution in coated beams exposed to external bending moments was utilized to deduce maximum stress levels at fracture in the coatings and in the substrates. The fracture tests were performed in situ in a scanning electron microscope by means of specially designed equipment. For uncoated beams, the average fracture stress was 6 GPa (maximum 13 GPa) for 〈100〉 beams, and 4 GPa (maximum 6 GPa) for 〈110〉 beams. Most coatings proved to have a strength-reducing effect, particularly the brittle, thin coatings of TiN, but also the Ti coatings (which displayed brittle fracture behavior). Ductile, thin coatings of Al were either neutral, or induced a small reinforcement. The influence of the thermal oxide was ambiguous: either a small strengthening or a small weakening effect. Five different types of fracture in coated silicon beams are discussed, and "reinforcement factors'' associated with these fracture types are expressed in terms of fracture toughnesses. By comparing the experimental results with these expressions, it was possible to identify the probable types of fracture, and to explain why different strengthening or weakening effects occurred for different coatings.
    Type of Medium: Electronic Resource
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