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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 5388-5401 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption of hydrogen on a cobalt(101¯0) surface was investigated in ultrahigh vacuum (UHV) between 85 and 500 K using Video-LEED, temperature-programmed thermal desorption (TPD), work function (ΔΦ) measurements, and high-resolution electron energy loss spectroscopy (HREELS). Between 90 and 200 K, hydrogen adsorbs dissociatively with high sticking coefficient (s0≥0.8) via precursor kinetics and forms, with increasing exposure, a c(2×4), a p2mg (2×1) and a (1×2) LEED structure (hydrogen coverages aitch-thetaH=0.5, 1.0, and 1.5, respectively). While the first two structures represent true ordered hydrogen phases there is strong evidence that the (1×2) phase is reconstructed, likely in a paired-row configuration. The formation of the (1×2) phase is slightly thermally activated; its decomposition produces a sharp thermal desorption maximum (α state) appearing on the low-energy side of a β-TPD signal which reflects the hydrogen desorbing from the unreconstructed surface. The activation energies for desorption from the α and β states are 62 and 80 kJ/mol, respectively. Chemisorption in the β state [(2×1) phase up to aitch-thetaH=1.0] is associated with a ΔΦ of +207 meV, while the fully developed (1×2) reconstructed phase (α state) causes a ΔΦ of approximately −122 meV resulting in an overall work function change of +85 meV at saturation. From HREELS, we determine the H adsorption site in all superstructures to be threefold with a local CS symmetry. Our results are discussed and compared with previous findings for similar metal–hydrogen interaction systems.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 1020-1027 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The orientation and the intramolecular relaxation due to adsorption of the chiral phenanthrene-derivative heptahelicene, C30H18, on Cu(111) and Cu(332) surfaces have been investigated by means of angle-scanned full-hemispherical x-ray photoelectron diffraction. Although the C 1s diffraction patterns of the adsorbed submonolayer coverage helicene films exhibit scattering anisotropies of less than two percent, a detailed analysis involving simple molecular mechanics calculations of the atomic coordinates, photoelectron diffraction single-scattering cluster calculations and an R-factor analysis permits the determination of the helicene molecular orientation. On Cu(111), the molecules are found to bind to the substrate surface via their terminal phenanthrene group oriented parallel to the surface plane, while on Cu(332) the three terminal C-6 rings are oriented parallel to the (111) terrace plane. Six azimuthal molecular orientations are found to coexist on Cu(111), on Cu(332), however, the step–molecule interaction leads to a unique azimuthal alignment of the heptahelicene molecules. The heptahelicene on Cu(332) system thus represents a chiral surface with single-phase orientational order. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science Letters 254 (1991), S. L469-L474 
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science Letters 259 (1991), S. A623 
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 254 (1991), S. L469-L474 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 259 (1991), S. 18-25 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 32-37 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The interface between diamond-like amorphous hydrogenated carbon (a-C : H) and Al2O3 was analysed by sputter depth profile analysis via x-ray photoelectron spectroscopy. X-ray photoelectron spectra were also recorded during direct ion beam deposition (CH4, E = 400 eV) monitoring the initial build-up of the interface. No stoichiometric interface compound was detected, although Al2O3 is reduced to Al2O3-x (x ∼ 0.5-1) enabling an interaction with the carbon atoms. This results in an excellent adhesion of a-C : H to the chemically inert Al2O3.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 691-696 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to study the influence of fluorine contamination on aluminium microchip bond pads. Sputter depth profiles indicated that the oxide layer thickness on those band pads, which showed poor gold wire adhesion, was higher than the thickness of the native oxide layer of aluminium. This corrosion was induced by segregation of fluorine into the bulk during storage of the wafers in closed polypropylene boxes. The contamination was found to be of the Al(OF)x type, which was initially formed in the CF4/O2 plasma-etching process. On test samples of aluminium metallization that have been stored with the process wafers, the fluorine contamination was located on the surface only. No segregation and no further oxidation occurred. In this case the fluorine contamination is of the AlFx type.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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