ISSN:
1573-4854
Keywords:
porous gallium phosphide
;
photoconductivity
;
surface recombination
;
microwave reflectance
;
TRMC
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Using time resolved microwave conductivity experiments, the dynamics of charge carrier recombination in nanoporous GaP was studied. The photoinduced conductivity initially decays very rapidly on a microsecond timescale but slows down by eight orders of magnitude in its final stages. The experimental results can be explained by a model in which charge carrier recombination takes place at the semiconductor surface, the rate being determined by the band bending across the depletion layer. The conductivity response is characteristic for a situation where the typical length scale for the nanoporous semiconductor network (10−7 m) is comparable to the width of the depletion layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009617105840
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