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  • 1
    Electronic Resource
    Electronic Resource
    InAs self-assembled quantum dots on InP by molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 991-993 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of room temperature photoluminescence (PL) emission from a 0-dimensional system in the ∼1.4 to ∼1.7 μm spectral region. Molecular beam epitaxy was used to grow InAs self-assembled quantum dots in AlInAs on an InP substrate. Preliminary characterizations have been performed using PL and transmission electron microscopy. The low temperatures PL spectra also display excited state emission and state filling as the excitation intensity is increased. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116122
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  • 2
    Electronic Resource
    Electronic Resource
    Wavefunction engineering for enhanced quantum well intermixing and integrated infrared spectrometers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3857-3860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum well potentials are engineered to control the energy level shifts induced by semiconductor alloy intermixing. A few monolayers of a semiconductor with a different band gap can be inserted at the node or at the crest of wavefunctions with different parities to enhance the interdiffusion-induced interband transition energy-shifts, or to manipulate the intersubband transition energies. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365751
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  • 3
    Electronic Resource
    Electronic Resource
    Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1496-1502 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled quantum dots (QDs) of highly strained InAlAs have been grown by molecular beam epitaxy in separate-confinement p–i–n heterostructures on (001) GaAs substrates. Results from a systematic study of samples with varying amounts of deposited material relates the observed emission peaks with QD levels, wetting layer states, or barrier materials. For samples with high-QD concentration, lasing is observed in the upper-QD shells. A sample with contact layers improving carrier and optical confinement operates up to room temperature and displays lowered threshold current densities. A threshold current density of ∼4 A/cm2 is measured for this structure at T=5 K and continuous-wave operation is obtained up to T∼77 K. A material gain larger than 1.7×104 cm−1 is measured for this single-layer structure. Lasing is observed in the upper-QD shells for small gain media, and progresses towards the QD lower states for longer cavity lengths representing an emission shift of 45 meV. A minor dependence of the threshold on QD density is found for samples having densities between 20 and hundreds of QDs per micron squared. For samples with multiple QD layers displaying vertical self-assembling, an increase in the emission linewidth is observed compared with single-layer samples and multilayer samples with uncorrelated growth. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372040
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  • 4
    Electronic Resource
    Electronic Resource
    Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1388-1390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy levels of nanometer size InGaAs quantum dots epitaxially grown on GaAs by the coherent islanding effect are probed using selectively excited photoluminescence (PL), and PL excitation. A lateral-confinement-induced interlevel spacing of ∼30 meV between the first two states can be deduced from the spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112060
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  • 5
    Electronic Resource
    Electronic Resource
    Visible luminescence from semiconductor quantum dots in large ensembles (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 521-523 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible luminescence has been obtained from ensembles of defect-free, InxAl(1−x)As islands of ultrasmall dimensions embedded in AlyGa(1−y)As cladding layers. These structures were grown by molecular beam epitaxy and studied with low-temperature photoluminescence (PL) and transmission electron microscopy. Visible luminescence is produced using various compositions of InxAl(1−x)As/AlyGa(1−y)As. Quantum dot size distributions, planar densities, dot heights, and wetting layer thicknesses are presented and correlated with the PL spectra. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115175
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  • 6
    Electronic Resource
    Electronic Resource
    Time-resolved optical characterization of InGaAs/GaAs quantum dots (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2815-2817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the optical characterization of the strained InGaAs/GaAs quantum dots (QDs). The temperature dependence of the photoluminescence (PL) indicates that the onset energy of the thermal quenching in ∼20-nm-diam QDs is enhanced by a factor of ∼2 as compared to a quantum well (QW), due to the additional confinement. At low temperature, an increased carrier lifetime is observed for the QDs as compared to a reference QW (880 vs 330 ps). The carrier lifetime in the QDs was found to be independent of the temperature for T〈30 K. In addition to this different dynamics of the localized excitons, we find that in the steady state PL and PL excitation, there is virtually no overlap between the emission and the absorption energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111434
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  • 7
    Electronic Resource
    Electronic Resource
    Reduction of InGaAs/GaAs laser facet temperatures by band gap shifted extended cavities (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1662-1664 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflectance modulation measurements have been used to determine facet temperatures of InGaAs/GaAs double quantum well (QW) graded-index separate-confinement heterostructure ridge-waveguide lasers possessing band gap tuned passive cavity sections. We find that the incorporation of transparent extended cavities, produced by ion-implantation enhanced QW intermixing, significantly decreases the laser facet temperatures. The reduced photoabsorption occurring at the facets, achieved by the QW intermixing process, should lead to increases in both the maximum optical power levels and device longevity prior to the onset of catastrophic failure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118663
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  • 8
    Electronic Resource
    Electronic Resource
    Intermixing in quantum-dot ensembles with sharp adjustable shells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2374-2376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: State-filling spectroscopy is used to study the effects of alloy intermixing in quantum-dot (QD) ensembles having well-defined electronic shells. Rapid thermal annealing is performed on samples of self-assembled QDs grown with different intersublevel energy spacings. For InAs/GaAs QDs, the intersublevel is tuned between ∼90 and 25 meV. The intense and sharp shell structures observed in photoluminescence indicate unambiguously that the QDs retained their zero-dimensional density of states after the diffusion of the potential, which also causes strong blueshifts (up to ∼200 meV) and a pronounced narrowing of the inhomogeneously broadened emission (down to ∼12 meV). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125019
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  • 9
    Electronic Resource
    Electronic Resource
    Evolution of the energy levels in quantum dot ensembles with different densities (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1866-1868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ensembles of self-assembled InAs/GaAs quantum dots (QDs) have been obtained with different densities by molecular beam epitaxy. The evolution of the structural and optical properties with coverage shows that lateral interactions are present for QD spacings of hundreds of nanometers (coverage〉∼109 QDs/cm2). Clear evidence for transfer of InAs from the wetting layer to the QDs is observed at the onset of the Stranski–Krastanow's island formation for 1.83 monolayers (MLs). QDs with sharp electronic shell structures are observed by state-filling spectroscopy for the low density ensembles (1.83–1.91 ML). A decrease in the photoluminescence intensity is observed for more than 1.96 ML and is associated with the coalescence of the islands. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124854
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  • 10
    Electronic Resource
    Electronic Resource
    Near-surface InAs/GaAs quantum dots with sharp electronic shells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2707-2709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between zero-dimensional states and surface states is studied using near-surface quantum dot (QD) ensembles with well-defined electronic shells. The inhomogeneous broadening of self-assembled InAs/GaAs QDs increases from ∼30 to more than ∼46 meV as the distance of the QDs from the surface is changed from 100 to 5.0 nm. Simultaneously, a decrease of the radiative recombination intensity by ∼3 orders of magnitude, and a red-shift of ∼65 meV are observed. For QDs capped with less than ∼10 nm, remarkable charge transfers between the QD and surface states lead to optical memory effects lasting over time-scales of several minutes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126450
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