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  • 1
    Electronic Resource
    Electronic Resource
    Modeling of two-junction, series-connected tandem solar cells using top-cell thickness as an adjustable parameter (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1890-1895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical efficiencies are calculated for two-junction, series-connected solar cells using air mass 1.5 global and direct irradiance spectra. For band-gap combinations previously limited by a low bottom-cell current, thinning of the top cell is shown to result in significant increases in the theoretical efficiencies. The increases are primarily due to increased short-circuit currents, since current matching is achievable. Smaller gains are also seen in the open-circuit voltages of the thinner cells when a low surface-recombination velocity is assumed. Thus, a number of material combinations which previously could only be used in four-terminal configurations can now be considered for series-connected two-junction solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347177
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 623-625 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga0.5In0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched, and has a theoretical efficiency of 34%. The device was grown by metalorganic chemical vapor deposition at 700 °C, using trimethylgallium, trimethylindium, arsine, and phosphine as sources. The minority-carrier transport properties of the Ga0.5In0.5P are shown to be relatively insensitive to variations of the growth temperature and phosphine overpressure. Other factors that affect the efficiency of the device are presented and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102717
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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