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  • 1
    Electronic Resource
    Electronic Resource
    Sidegating effect on Schottky contact in ion-implanted GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7422-7423 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sidegating effect on the Schottky barrier in ion-implanted GaAs was investigated with capacitance-voltage profiling at various negative substrate voltages. It was demonstrated that the negative substrate voltage modulates the Schottky depletion region width as well as the space charge region at the substrate-active channel interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360399
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  • 2
    Electronic Resource
    Electronic Resource
    Precipitation in heavily arsenic-implanted GexSi1−x alloys (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1117-1119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of precipitation and diffusion in Ge0.5Si0.5 alloy implanted with As+ ions at an energy of 100 keV with a dose of 6×1016 cm−2 and subsequently annealed at 800 and 1000 °C for 1 h. The samples were analyzed by transmission electron microscopy and x-ray energy dispersive spectrometry. A high density of precipitates was observed near the surface of the samples after annealing both at 800 and 1000 °C. The behavior of the precipitation is strongly dependent on the anneal temperature. When the anneal temperature increases, the average size of precipitates increases and the distribution of the precipitates is localized in the vicinity of the surface. X-ray spectra show that most of the largest precipitates formed during the annealing are arsenides. Rodlike precipitates formed during the thermal annealing at 800 °C are tentatively identified as monoclinic GeAs by selected electron diffraction patterns. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113831
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  • 3
    Electronic Resource
    Electronic Resource
    Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 846-847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115524
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of annealing on self-organized InAs quantum islands on GaAs(100) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3518-3520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-organized InAs islands on (001) GaAs grown by molecular beam epitaxy were annealed and characterized with photoluminescence (PL) and transmission electron microscopy (TEM). The PL spectra from the InAs islands demonstrated that annealing resulted in a blueshift in peak energy, a reduction in intensity, and a narrower linewidth in the PL peak. In addition, the TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90° dislocations. The correlation between the changes in the PL spectra and the relaxation of strain in InAs islands was discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122842
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  • 5
    Electronic Resource
    Electronic Resource
    Alignment of misfit dislocations in the In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As/InP heterostructure (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 311-313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As system grown on the (001) InP substrate that misfit dislocation lines deviate 〈110〉 directions at an angle with its value depending on the gallium content. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on misfit dislocations in the interface between the III–V ternary compounds. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120721
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  • 6
    Electronic Resource
    Electronic Resource
    Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2951-2953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of arsenic clusters in a system of vertically aligned InAs quantum islands on GaAs during thermal annealing under As overpressure has been investigated by transmission electron microscopy (TEM) and Raman scattering. Semicoherent arsenic clusters, identified by TEM examination, have been formed on the surface of the GaAs capping layer. The existence of arsenic precipitates is also confirmed by Raman spectra, showing new peaks from the annealed specimen at 256 and 199 cm−1. These peaks have been ascribed to A1g and Eg Raman active phonons of crystalline arsenic. The phenomenon can be understood by a model of strain-induced selected growth under As overpressure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125198
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  • 7
    Electronic Resource
    Electronic Resource
    Testicular volume of boys after inguinal herniotomy: combined clinical and radiological follow-up (1999)
    Springer
    Pediatric surgery international 15 (1999), S. 40-41 
    Details
    ISSN: 1437-9813
    Keywords: Key words Herniotomy ; Testicular volume ; Ultrasonography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract A total of 173 boys aged 10 to 179 months with previous unilateral inguinal herniotomy were called back for follow-up. Clinical and ultrasound examinations of the scrotum were performed. The interval between operation and follow-up was 6 to 123 months (mean 31.68 months). One boy (0.58%) had a more than 50% and 10 (5.8%) had a more than 25% decrease in testicular volume on the operated side when compared with the non-operated side.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003830050508
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