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  • 1
    Electronic Resource
    Electronic Resource
    Electrical conduction in platinum–gallium nitride Schottky diodes (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4467-4478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Among the devices considered for high power generation is the ubiquitous field-effect transistors which require Schottky barriers for modulating the channel mobile charge. It is in this context that we have undertaken an investigation of likely metal-GaN contacts. Here we report on the electrical conduction and other properties of Pt–GaN Schottky diodes. These Schottky diodes were fabricated using n-GaN grown by the molecular beam epitaxy method. Both capacitance–voltage and current–voltage measurements have been carried out as a function of temperature to gain insight into the processes involved in current conduction. Based on these measurements, physical mechanisms responsible for electrical conduction at low and high voltages and temperatures have been suggested. Schottky barrier height determined from the current–voltage and capacitance–voltage measurements is close to 1.10 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363408
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  • 2
    Electronic Resource
    Electronic Resource
    Low resistance ohmic contacts on wide band-gap GaN (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1003-1005 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a new metallization process for achieving low resistance ohmic contacts to molecular beam epitaxy grown n-GaN (∼1017 cm−3) using an Al/Ti bilayer metallization scheme. Four different thin-film contact metallizations were compared during the investigation, including Au, Al, Ti/Au, and Ti/Al layers. The metals were first deposited via conventional electron-beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900 °C in a N2 ambient using rapid thermal annealing techniques. The lowest value for the specific contact resistivity of 8×10−6 Ω cm2, was obtained using Ti/Al metallization with anneals of 900 °C for 30 s. X-ray diffraction and Auger electron spectroscopy depth profile were employed to investigate the metallurgy of contact formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111961
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  • 3
    Electronic Resource
    Electronic Resource
    Negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 198-200 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermal-electrical model is presented to describe the negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors. Included in this model are the base band-gap shrinkage due to heavy doping, temperature dependence of AlGaAs and GaAs band gaps, and valence band discontinuity. The experimental results unambiguously support the predictions of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108217
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  • 4
    Electronic Resource
    Electronic Resource
    Reactive ion etching of GaN using BCl3 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 887-888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching with SiCl4 and BCl3 of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCl3 than with SiCl4 plasma. An etch rate of 8.5 A(ring)/s was obtained with the BCl3 plasma for a plasma power of 200 W, pressure of 10 mTorr, and flow rate of 40 sccm. Auger electron spectroscopy (AES) was used to investigate the surface of GaN films after etching. Oxygen contamination has been detected from the AES profiles of etched GaN samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110985
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxy-deposited nonalloyed Al contacts to n-type and p-type InGaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2254-2256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonalloyed Al contacts were deposited by molecular beam epitaxy on both n- and p-type In0.53Ga0.47As layers prior to air exposure. These were shown to be ohmic, with specific contact resistances in the range of mid μΩ cm2 by the transmission-line model method. The thermal stability of these contacts was tested by annealing at temperatures between 350 and 450 °C for 30 min and at 300 °C for 500 h. Both experiments showed stable specific contact resistances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106087
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  • 6
    Electronic Resource
    Electronic Resource
    AlxGa1−xAs/AlyGa1−yAs and GaAs pseudo-heterojunction bipolar transistors with lateral emitter resistor (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 994-996 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both AlxGa1−xAs/AlyGa1−yAs and GaAs pseudo-heterojunction bipolar transistors (HBTs) with lateral emitter resistors (laterally extended emitter ledge) are shown to exhibit base current ideality factors of 1.3 and 1.1, and uniform current gains of 10 and 5, respectively, even at current densities as low as 5×10−11 A/μm2. With this test structure, it is possible to separate the surface effects from the bulk effects. The structures investigated also allowed the confirmation that the emitter edge-thinning reported recently is very effective for reducing the surface recombination. The structures under investigation also show that GaAs HBTs can operate at collector currents in the microampere range or below.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108511
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  • 7
    Electronic Resource
    Electronic Resource
    High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3872-3874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current–voltage characteristics of AlGaN/GaN modulation doped field-effect transistors at elevated temperatures are studied experimentally. The drain–source current and extrinsic transconductance are both found to decrease with increasing temperature. Decrease in mobility with increasing temperatures is considered to be one of the causes of the reduction in the current and transconductance. The capacitance–voltage characteristic reveals the absence of heat activated traps in the modulation doped layer. The physics underlying various high-temperature operations of current–voltage characteristics is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117133
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1420-1422 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics of high performance GaN modulation-doped field-effect transistors (MODFETs) grown by reactive molecular beam epitaxy method are studied experimentally both in dark and under white light illumination. The maximum measured drain-source current is 626 mA/mm in dark and 695 mA/mm under illumination, which saturates at a relatively low drain-source voltage VDS. The transconductance increases with decreasing gate length reaching a value of 210 mS/mm in dark and 222 mS/mm under illumination for devices with a gate length of LG=1.5μm. Breakdown voltages of about 90 V have also been exhibited by devices with gate length LG=1.5 μm and drain-gate distance LDG=1 μm. To our knowledge, these are the best values obtained so far from GaN MODFETs which we attribute to the suppression of leakage currents and improved materials structure of the devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117601
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1556-1558 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been applied to characterize the structure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts on n-type GaN (∼1017 cm−3) epitaxial layers. The metals were deposited either by conventional electron-beam or thermal evaporation techniques, and then thermally annealed at 900 °C for 30 s in a N2 atmosphere. Before metal deposition, the GaN surface was treated by reactive ion etching. A thin polycrystalline cubic TiN layer epitaxially matched to the (0001) GaN surface was detected at the interface with the GaN substrate. This layer was studied in detail by electron diffraction and high resolution electron microscopy. The orientation relationship between the cubic TiN and the GaN was found to be: {111}TiN//{00.1}GaN, [110]TiN//[11.0]GaN, [112]TiN//[10.0]GaN. The formation of this cubic TiN layer results in an excess of N vacancies in the GaN close to the interface which is considered to be the reason for the low resistance of the contact. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117060
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  • 10
    Electronic Resource
    Electronic Resource
    First report of Wisteria vein mosaic virus in China (2004)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 53 (2004), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.2004.01035.x
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