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  • 1
    Electronic Resource
    Electronic Resource
    Illumination effects in high impedance InSb photodiodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4222-4226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage characteristics of high impedance (InSb) photodiodes are modeled both numerically and analytically. Numerical calculations show a linear relationship between the inverse dynamic resistance and the current density over a wide range of photon fluxes. This effect is found to originate from an excess diffusion current in the base region. An analytic derivation of the ideal photodiode equation shows that this excess diffusion current is due to the dependence of the space-charge boundary on the bias voltage. The resulting analytical expression provides a good approximation to the numerical calculations, and explicitly describes the dependence of the excess diffusion current and the dynamic resistance on illumination level and applied bias. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359883
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  • 2
    Electronic Resource
    Electronic Resource
    Ion beam mixing of GaAs with films of Al, Si, and their nitrides (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2586-2590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Al, AlN, Si, and Si3N4 deposited on GaAs substrates were irradiated with silicon ions. The amount of interfacial mixing was found to depend both on the composition of the thin film and on the ion dose. The greatest amount of mixing, as measured by Rutherford backscattering spectrometry and Auger depth profiling, occurred in the Al/GaAs system. Mixing in the Si/GaAs system showed a sublinear dose dependence as well as a deep diffusion of silicon into the substrate. Interfacial phase formation between the aluminum and silicon layers and the GaAs substrate was observed using Auger line shape analysis and low-energy electron loss spectroscopy. Small or negligible mixing was found in the AlN/GaAs and the Si3N4/GaAs systems, presumably due to strong nitrogen bonding in these layers. The data suggest that an optimal cap for through-cap implantation and annealing is a two-layer structure consisting of a thin Si3N4 layer below a thick AlN layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340995
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  • 3
    Electronic Resource
    Electronic Resource
    The excess carrier lifetime in p-type HgCdTe measured by photoconductive decay (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1705-1710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The excess carrier lifetime has been measured in p-type Hg1−xCdxTe, with x=0.225 and p∼1×1016/cm3 , using the technique of photoconductive decay. Measurements as a function of temperature were carried out on bulk vacancy-doped crystals grown by three different techniques, as obtained from four independent sources. The lifetimes at 77 K were found to vary between 23 and 100 ns, and were correlated with the inverse carrier concentration. We present simple theoretical arguments which show that the lifetime can, in certain cases, be limited by recombination at the 15-meV acceptor level. By considering this recombination mechanism, as well as recombination at deeper levels, we were able to model all our data and derive the dependence of lifetime on the doping level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344390
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  • 4
    Electronic Resource
    Electronic Resource
    High-energy-density pulsed ion-beam irradiation of Co/Si, Pt/Si, and Au/Si (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 175-181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed ion beams have been used to irradiate Pt/Si, Co/Si, and Au/Si samples. The thicknesses and compositions of the reacted layers were determined using Rutherford backscattering spectrometry. The phases in the reacted layers were identified using x-ray diffraction and transmission electron microscopy. Low-energy-density irradiation produced interfacial layers having near-eutectic compositions. High-energy-density irradiation produced interfacial layers having graded compositions (ranging between two solidus phases). The experimentally determined compositions, compositional gradients, and phases are consistent with interfacial melting at temperatures at or above the eutectic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338851
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  • 5
    Electronic Resource
    Electronic Resource
    Pulsed proton-beam annealing of Ir and IrxV100−x thin films on silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 264-269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pulsed proton beam was used to anneal Ir and IrxV100−x thin films deposited on Si single crystals. Compound phases were produced by local melting of the metal-Si interface. Phase identification was carried out by x-ray diffraction; while component distribution was determined by Auger electron spectroscopy and Rutherford backscattering spectrometry. The morphology of the silicide layers was examined using transmission electron microscopy; and Schottky barrier heights were determined by current-voltage measurements. At intermediate deposited energy densities (∼0.5 J/cm2) a controlled interfacial reaction was observed. In the case of Ir/Si, amorphous IrSi as well as polycrystalline IrSi and Ir2Si3 was detected in the reacted region. For the codeposited IrxV100−x film, with x=80 and 50, the interfacial layer reacting with the Si substrate maintained the Ir : V ratio of the as-deposited film. This is in contrast to the case of furnace annealing where preferred accumulation of Ir is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334798
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  • 6
    Electronic Resource
    Electronic Resource
    Shockley–Read recombination and trapping in p-type HgCdTe (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3405-3412 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concepts and definitions of the steady-state minority-carrier lifetime, the steady-state majority-carrier lifetime, and the transient excess-carrier lifetime in semiconductors are reviewed. The effects that Shockley–Read centers have on these lifetimes are discussed, with emphasis given to the case of p-type Hg0.775Cd0.225Te containing traps. Measurements of the excess-carrier lifetime in Hg0.775Cd0.225Te (Na∼1×1016/cm3) using various experimental techniques are then summarized in view of the above definitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346346
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of interfaces of metal/amorphized (by implantation) Si/c-Si structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1940-1946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of metal/implanted (amorphous) Si contacts were studied, emphasizing the effects of the doping level, of the metal type, and of the heat treatments applied prior to the metal deposition. The implantation was carried out using 60-keV Ar+ ions at a dose of 1016 cm−2, and resulted in the formation of a thin (1000-A(ring)-thick) amorphous layer on top of the crystalline substrate. The doping level of the implanted Si affected the current-voltage (I-V) characteristics of the contacts mainly in the reverse bias (low doping–low currents), while the forward bias characteristics were quite independent of this parameter. The device characteristics were very sensitive to the metal type, Al, Ti-W, or Pt. Thermal treatments applied prior to the metal deposition affected the characteristics by lowering the device resistance in correspondence with the thinning of the amorphous layer as a result of epitaxial regrowth. The I-V characteristics, as well as their dependence on the different process parameters, are explained using a model of charge injection into a thin layer of trap rich amorphous Si bounded by a metal/a-Si interface on one side and by an a-Si/c-Si heterojunction on the other side.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345570
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  • 8
    Electronic Resource
    Electronic Resource
    Rapid annealing of Hg1−xCdxTe by immersion in a hot mercury bath (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1158-1160 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple technique for annealing ion implanted Hg1−xCdxTe in a mercury atmosphere has been developed. In this technique, Hg1−xCdxTe is sandwiched between two silicon wafers and immersed in a hot mercury bath. This permits rapid annealing at well defined temperatures and times. Indium-implanted Hg1−xCdxTe (x=0.23 and x=0.7) samples have been annealed using this method at temperatures ranging from 260 to 350 °C and for times ranging from 3 s to 1 h. The near surface crystalline quality, as measured by ion channeling, improved after annealing and was comparable to that obtained by other annealing techniques. No change in surface stoichiometry, as measured by particle-induced x-ray emission, was detected in the Hg0.77Cd0.23Te samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98718
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  • 9
    Electronic Resource
    Electronic Resource
    Quantitative electron channeling measurements for high sensitivity surface analysis (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2098-2100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high sensitivity to low dose implantation damage has been achieved by a novel quantitative analysis of electron channeling patterns (ECPs). An algorithm, based on the statistical analysis of the two-dimensional ECP pictures obtained from a scanning electron microscope, has been developed. The analysis yields a single number (the variance), analogous to the quantity χmin deduced from ion channeling measurements, which characterizes the surface crystallinity. Measurements performed on implanted silicon (point defects) and CdTe (extended defects) crystals show that electron channeling is approximately two orders of magnitude more sensitive to implantation damage than ion channeling. Changes in the ECP of Si and CdTe were observed after implantations with 200 keV Ar and 320 keV In ions at doses as low as 1×1012 cm−2 and 1×1013 cm−2, respectively. Moreover, electron channeling is capable of probing areas about four orders of magnitude smaller than commonly used ion channeling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103953
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  • 10
    Electronic Resource
    Electronic Resource
    Transient and steady-state excess carrier lifetimes in p-type HgCdTe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1882-1884 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient and steady-state excess carrier lifetimes in p-type Hg0.775Cd0.225Te have been measured as a function of temperature. It is demonstrated that the transient lifetime can be greater than the steady-state lifetime by as much as a factor of 16 at 77 K. This difference is attributed to minority-carrier trapping, and explains, in part, the large range of lifetimes which have been reported for this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102160
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