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Monitoring of intermixing and interdiffusion by x-ray diffraction of ion-implanted quantum-well structures (1996)

Karla, I. ; Hogg, J. H. C. ; Hagston, W. E. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 1898-1902

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The intermixing (and associated interdiffusion) resulting from ion implantation of argon ions into Cd1−xMnxTe quantum-well structures has been investigated. The experimental value of the mixing parameter of 1.5×103 A(ring)/eV is large compared with the values reported for this parameter in metallic superlattices, and is consistent with an appreciable degree of inter diffusion accompanying the implantation process. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.361093

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Alloy nonrandomness in diluted magnetic semiconductors (1996)

Harrison, P. ; Fatah, J. M. ; Stirner, T. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 1684-1688

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A simple model of alloy nonrandomness is introduced within a framework where the effective concentration of spin singlets as a function of the nominal concentration of magnetic ions in a nonrandom alloy can be obtained by transformations of the corresponding function in random alloys. The theory shows that a given system that is appreciably nonrandom can have a magnetic response almost identical with that of a random distribution. Possible ways of identifying alloy nonrandomness in diluted magnetic semiconductor structures are described. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360954

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Double crystal x-ray diffraction simulations of diffusion in semiconductor microstructures (1998)

Fatah, J. M. ; Harrison, P. ; Stirner, T. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 4037-4041

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Diffusion in group IV, III-V and II-VI semiconductors is an interesting problem not only from a fundamental physics viewpoint but also in practical terms, since it could determine the useful lifetime of a device. Any attempt to control the amount of diffusion in a semiconductor device, whether it be a quantum well structure or not, requires an accurate determination of the diffusion coefficient. The present theoretical study shows that this could be achieved via x-ray diffraction studies in quantum well structures. It is demonstrated that the rocking curves of single quantum wells are not sensitive to diffusion. However the intensity of the first order satellite, which is characteristic of superlattice rocking curves, is strongly dependent upon diffusion and it is proposed that this technique could be used to measure the diffusion coefficient D. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.367159

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