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  • 1
    Electronic Resource
    Electronic Resource
    Ion implantation into (x11)A-oriented InP and GaAs (x≤4) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7774-7778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si, Ge, and Be implantations were performed into (x11)A-oriented semi-insulating InP and GaAs substrates for x≤4. For comparison some of the implantations were also performed into (110)- and (100)-oriented substrates. For 200 keV/5×1013 cm−2 Si and 200 keV/3×1013 cm−2 Ge implants after 850 °C/7 s annealing, the InP is always n type with similar sheet resistance independent of the substrate orientation. No in-diffusion of Si or Ge was observed after annealing for any substrate orientation. Similar behavior was observed for Si implants in GaAs and for Si/B co-implants in both InP and GaAs. Photoluminescence measurements were performed on the Si- and Si/B-implanted InP and GaAs. For 30 keV/1.5×1014 cm−2 Be implants in both InP and GaAs, the in-diffusion of Be in (311)A-oriented substrates is less compared to the (100) material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356612
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  • 2
    Electronic Resource
    Electronic Resource
    Interface roughness scattering in AlAs/InGaAs resonant tunneling diodes with an InAs subwell (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2502-2508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present simulation results on the current-voltage (I-V) characteristics of an InP-based AlAs/InGaAs resonant tunneling diode (RTD) with InAs subwell. Space-charge limited transport is accounted for using a self-consistent electrostatic potential calculated using the Hartree approximation. Three-dimensional scattering is simulated using the recently developed multiple sequential scattering theory. Interface roughness scattering is found to be dominant over polar phonon scattering in the devices studied. Of particular interest is interface-roughness (IR) scattering at the InGaAs/AlAs and InGaAs/InAs interfaces and its impact on the valley current. The existence of a critical terrace size that maximizes IR scattering is identified through simulation. The origin of the asymmetry commonly measured in the RTD I-V characteristic is discussed with respect to asymmetries in interface scattering. The use of the InAs subwell and associated interface roughness scattering to tune the peak current while keeping a nearly constant current peak-to-valley ratio is demonstrated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361104
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  • 3
    Electronic Resource
    Electronic Resource
    Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2163-2164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed structures with two well-defined negative differential resistance (NDR) regions by sequentially growing two resonant tunneling devices separated by an n+ connecting layer. Devices fabricated from these structures exhibited three stable operating points for multilevel logic circuits and were used in circuits which multiplied the input signal frequency by 3 or 5. This approach can be extended to obtain more than two NDR regions by vertical integration of additional resonant tunneling structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99565
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  • 4
    Electronic Resource
    Electronic Resource
    Deep radiative levels in as-grown and implanted rapid thermal annealed InP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2426-2433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep radiative levels in as-grown and Si-, Be-, and Hg-implanted InP:Fe activated by rapid thermal annealing are studied by photoluminescence measurements. A broadband centered at 1.07 eV is observed in unimplanted InP:Fe. The 1.17- and 0.775-eV peaks in the spectra of Si-implanted InP:Fe, and the 0.861-eV peak in the spectra of Be-implanted InP:Fe are believed to be due to the dopant-defect complexes. In Hg-implanted samples HgIn acceptor related peak is observed at 1.329 eV with longitudinal optical phonon peaks at 1.286 (1-LO) and 1.244 eV (2-LO). A peak at 0.919 eV is observed as an intrinsic peak in all InP samples. A single peak or several peaks with shoulders are also observed in the range 0.65–0.725 eV in many InP samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341677
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    Paper (German National Licenses)
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