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  • 1
    Electronic Resource
    Electronic Resource
    Analytical solutions for strain in pyramidal quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 730-736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical solutions for strain in buried pyramidal quantum dots (QDs) of arbitrary truncation, assuming isotropy of the elastic constants, are presented for the first time. The expressions allow the strain to be evaluated extremely rapidly compared to atomistic, finite-element, or other numerical techniques. As a demonstration of the new results, calculations are performed for InAs QDs buried within a GaAs matrix for a range of truncations for the cases of an isolated QD, an isolated QD with a graded composition profile, and a QD array. Results show that strain magnitudes and trends are highly dependent upon geometry and composition. For example, the biaxial strain at the apex of a pyramid is shown to be negative, but becomes positive as the truncation increases. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373729
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  • 2
    Electronic Resource
    Electronic Resource
    Strain distributions in quantum dots of arbitrary shape (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 297-305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method based on the Green's function technique for calculating strain in quantum dot (QD) structures has been developed. An analytical formula in the form of a Fourier series has been obtained for the strain tensor for arrays of QDs of arbitrary shape taking into account the anisotropy of elastic properties. Strain distributions using the anisotropic model for semiconductor QDs are compared to results of a simplified model in which the elastic properties are assumed to be isotropic. It is demonstrated that, in contrast to quantum wells, both anisotropic and isotropic models give similar results if the symmetry of the QD shape is less than or equal to the cubic symmetry of the crystal. The strain distribution for QDs in the shape of a sphere, cube, pyramid, hemisphere, truncated pyramid, and flat cylinder are calculated and analyzed. It is shown that the strain distributions in the major part of the QD structure are very similar for different shapes and that the characteristic value of the hydrostatic strain component depends only weakly on the QD shape. Application of the method can considerably simplify electronic structure calculations based on the envelope function method and plane wave expansion techniques. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370728
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  • 3
    Electronic Resource
    Electronic Resource
    A simple method for calculating strain distributions in quantum dot structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6700-6702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method is presented for calculating the stress and strain distributions arising from an initially uniformly strained quantum dot of arbitrary shape buried in an infinite isotropic medium. The method involves the evaluation of a surface integral over the boundary of the quantum dot and is therefore considerably more straightforward to implement than alternative stress evaluation techniques. The technique is ideally suited to calculating strain distributions within disordered arrays of pyramidal quantum dots prepared by Stranski–Krastanow growth. The strain distribution for a cuboidal quantum dot is presented and compared to that of a rectangular quantum wire. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365210
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  • 4
    Electronic Resource
    Electronic Resource
    Stress distributions and defect nucleation in buried heterostructure laser diodes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3392-3395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shear stress distributions, arising at the corners of the active region of buried heterostructure laser diodes, are calculated for a given mismatch and various dimensions of the buried stripe and also for a single and a multiple quantum well structure. The locations of high stresses are compared to the nucleation sites of shear stress induced defects, as observed by transmission electron microscopy in real lasers. The implications of the defects are illustrated and discussed for the case of an overstress tested diode as well as possibilities to prevent the defect formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356098
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  • 5
    Electronic Resource
    Electronic Resource
    Strain relaxation in strained buried heterostructure lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1271-1273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations of the stress/strain distribution in a buried strained heterostructure laser are performed for active regions with aspect ratios ranging from 1:1 to 40:1 and an overall misfit strain of 1%. The strain relaxation is found to be small for the high aspect ratios over the central 75% of the active region. Considerable relaxation of the strain occurs at the edges of the active region, however, and throughout the whole cross section for the smaller aspect ratios. The maximum shear stress is found to occur at the corners of the strained region in agreement with previous calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110862
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