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  • 1
    Electronic Resource
    Electronic Resource
    Faceted GaInAs/InP nanostructures grown by selective area chemical beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4883-4888 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP was grown by chemical beam epitaxy in narrow windows of widths varying between 20 and 2 μm, oriented along the [011] or [01¯1] directions opened in a SiO2 mask on an (001) InP substrate. Several facets appear along the sidewalls and on the edge of the mesas owing to different growth rates on different crystallographic planes. These can be understood as consequences of the migration of group III species from one crystallographic plane to another. We have studied the formation of such facets and their effects on the growth of GaInAs/InP structures of various thicknesses. The samples were studied using a field emission scanning electron microscope (SEM) and low temperature photoluminescence (PL). SEM micrographs show that for lines oriented along the [011] direction the dominant InP sidewall facets are (111)B planes on which GaInAs does not grow as long as Ga and In species can migrate towards (001). For the orthogonal direction, however, the lateral growth rate of the InP sidewalls is large and the faceting of the mesas is more complicated. The PL spectra of GaInAs quantum wells grown on such mesas exhibit several peaks whose energy depends on the initial width of the mask. They can be interpreted in terms of crystallographic plane dependent migration and desorption rates of Ga and In species. The (111)B facets of [011] directed mesas were used to produce inverted V-shaped mesa wire structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366351
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  • 2
    Electronic Resource
    Electronic Resource
    Atomic step networks as selective epitaxial templates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 827-829 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique to control epitaxial growth laterally across a wafer is presented, which does not use a mask. A vicinal Si(111) substrate was patterned by optical lithography and heated to fabricate a regular pattern of bunches of atomic steps. Under appropriate growth conditions, it is seen that epitaxial material, here GaAs, sticks only to the step bunches, not to the terraces. It is possible to fabricate large-scale complex networks of GaAs with micron scale and submicron scale features. The conditions required to obtain selective growth are presented. It is shown that there are two regimes of selective growth—high temperature (〉550 °C), or low temperature (〈400 °C). Selectivity is obtained via two distinct mechanisms: desorption and diffusion, respectively. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120906
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  • 3
    Electronic Resource
    Electronic Resource
    Inhomogeneous broadening in quantum dots with ternary aluminum alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2701-2703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study how the optical properties of InAs self-assembled quantum dots (QDs) grown on GaAs substrate are affected when using AlGaAs barriers to increase the carrier confinement. The inhomogeneous broadening of the QD ensemble is found to increase when ternary aluminum alloys are used next to or within the QDs. By growing thin GaAs spacers to separate the QDs from the AlGaAs barriers, we obtain QD ensembles which exhibit little photoluminescence quenching and well-defined excited states up to room temperature. Postgrowth rapid thermal annealing is then used to intermix these InAs/GaAs/AlGaAs QDs and diffuse the Al towards the QDs. In contrast with QDs having thick binary GaAs barriers, the inhomogeneous broadening of QDs with nearby AlGaAs barriers is not decreased with intermixing, leading to unresolved excited state peaks when the interdiffusion length becomes comparable to the GaAs spacer thickness. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410333
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