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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6002-6010 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The work function of tetrahedral amorphous carbon (ta-C) has been measured by Kelvin probe to lie in the range 4–5 eV, irrespective of its sp3 content or nitrogen addition. This implies that the surface barrier to emission is dominant and that emission changes caused by sp3 bonding or nitrogen addition are not directly due to changes in work function. Hydrogen, oxygen, and argon plasma treatments are all found to increase the emission of a-C, but hydrogen and argon treatments are found to reduce the work function while oxygen treatment increases it. Detailed studies of the surface with varying plasma treatment conditions suggest that the changes in emission arise mainly from changes in the surface microstructure, such as the formation of sp2 regions within the sp3 bulk. The need for local field enhancement mechanisms to account for emission over the sizeable barrier is emphasized, which may arise from local chemical nonhomogeneity, or formation of nanometer-size sp2 clusters embedded in an sp3 matrix. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8032-8039 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ scanning tunneling microscopy has been used to study the evolution of the surface topography of the growing surface of hydrogenated amorphous silicon (a-Si:H) in order to understand its growth mechanism. The surface is found to possess an island-like structure and the island diameter is found to increase with increasing growth temperature. A Fourier analysis of the surface roughness has an exponent of i=1.17. A comparison of the roughness of films of different thickness gives a dynamic scaling exponent of β=0.28, but the films are not particularly self-affine in character. It is argued that the exponent i is not evidence of a viscous flow regime, but that nonstochastic growth of a random network occurs, caused by a preferential hydrogen abstraction at kink-like and step-like surface sites. A simple simulation of the topography is used to support this conclusion. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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